FDP3672 ,N-Channel PowerTrench MOSFET, 105V, 41A, 0.033 Ohms @ VGS = 10V, TO-220 PackageFDP3672September 2003FDP3672®N-Channel PowerTrench MOSFET105V, 41A, 33mΩ
FDP3682 ,N-Channel UltraFET ?Trench MOSFET 100V, 32A, 36mOhmApplications r = 32mΩ (Typ.), V = 10V, I = 32A DC/DC converters and Off-Line UPSDS(ON) GS D Q ( ..
FDP39N20 ,Discrete MOSFETApplications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.•PDP TV• Lig ..
FDP4020P ,P-Channel 2.5V Specified Enhancement Mode Field Effect Transistorapplications.• 175°C maximum junction temperature rating.SGDT = 25°C unless otherwise notedAbsolut ..
FDP4030L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
FDP46N30 ,300V N-Channel MOSFETFeatures Description• 46A, 300V, R = 0.079Ω @V = 10 V These N-Channel enhancement mode power field ..
FQA17P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FQA18N50V2 ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 20A, 500V, R = 0.265Ω @V = 10 VDS(on) ..
FQA18N50V2 ,500V N-Channel MOSFETFQA18N50V2TMQFETFQA18N50V2500V N-Channel MOSFET
FQA19N20C ,200V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect • 21.8A, 200V, R = 0.17Ω @V = 10 VDS(on ..
FQA19N20L ,200V LOGIC N-Channel MOSFET
FQA19N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 18.5A, 600V, R = 0.38 Ω @ V = 10 VDS( ..
FDP3672
N-Channel PowerTrench MOSFET, 105V, 41A, 0.033 Ohms @ VGS = 10V, TO-220 Package
FDP3672 September 2003 FDP3672 ® N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications r = 25mΩ (Typ.), V = 10V, I = 41A DC/DC converters and Off-Line UPS DS(ON) GS D Q (tot) = 28nC (Typ.), V = 10V g GS Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Q Body Diode RR High Voltage Synchronous Rectifier Optimized efficiency at high frequencies Direct Injection / Diesel Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q10142V Automotive Load Control Electronic Valve Train Systems Formerly developmental type 82760 D DRAIN SOURCE (FLANGE) DRAIN GATE G TO-220AB FDP SERIES S MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 105 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 41 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 31 A D C GS o o Continuous (T = 25 C, V = 10V, R = 62 C/W) 5.9 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 48 mJ AS Power dissipation 135 W P D o o Derate above 25C0.9W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220 1.11 C/W θJC o R Thermal Resistance Junction to Ambient TO-220 (Note 2) 62 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2003 FDP3672 Rev. A3
