FDP3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16mOhmFDB3652 / FDP3652 / FDI3652July 2002FDB3652 / FDP3652 / FDI3652®N-Channel PowerTrench MOSFET100V, 6 ..
FDP3672 ,N-Channel PowerTrench MOSFET, 105V, 41A, 0.033 Ohms @ VGS = 10V, TO-220 PackageFDP3672September 2003FDP3672®N-Channel PowerTrench MOSFET105V, 41A, 33mΩ
FDP3682 ,N-Channel UltraFET ?Trench MOSFET 100V, 32A, 36mOhmApplications r = 32mΩ (Typ.), V = 10V, I = 32A DC/DC converters and Off-Line UPSDS(ON) GS D Q ( ..
FDP39N20 ,Discrete MOSFETApplications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.•PDP TV• Lig ..
FDP4020P ,P-Channel 2.5V Specified Enhancement Mode Field Effect Transistorapplications.• 175°C maximum junction temperature rating.SGDT = 25°C unless otherwise notedAbsolut ..
FDP4030L ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
FQA16N50 ,500V N-Channel MOSFET
FQA16N50 ,500V N-Channel MOSFET
FQA16N50 ,500V N-Channel MOSFET
FQA17N40 ,400V N-Channel QFET
FQA17N40 ,400V N-Channel QFET
FQA17P10 ,100V P-Channel MOSFETapplications such as audio amplifier,high efficiency switching DC/DC converters, and DC motorcontro ..
FDP3652
N-Channel PowerTrench ?MOSFET 100V, 61A, 16mOhm
FDB3652 / FDP3652 / FDI3652 July 2002 FDB3652 / FDP3652 / FDI3652 ® N-Channel PowerTrench MOSFET 100V, 61A, 16mΩ Features Applications •r = 14mΩ (Typ.), V = 10V, I = 61A DC/DC Converters and Off-line UPS DS(ON) GS D Q (tot) = 41nC (Typ.), V = 10VDistributed Power Architectures and VRMs g GS Low Miller ChargePrimary Switch for 24V and 48V Systems Low Qrr Body DiodeHigh Voltage Synchronous Rectifier UIS Capability (Single Pulse and Repetitive Pulse)Direct Injection / Diesel Injection Systems Qualified to AEC Q10142V Automotive Load Control Electronic Valve Train Systems Formerly developmental type 82769 SOURCE DRAIN DRAIN (FLANGE) D GATE GATE SOURCE DRAIN G SOURCE GATE DRAIN TO-263AB TO-220AB TO-262AA S (FLANGE) DRAIN FDB SERIES FDP SERIES FDI SERIES (FLANGE) MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 61 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 43 A D C GS o o Continuous (T = 25 C, V = 10V) with R = 43 C/W) 9 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 182 mJ AS Power dissipation 150 W P D o o Derate above 25C1.0W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-263, TO-262 1.0 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-263, TO-262 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDB3652 / FDP3652 / FDI3652 Rev. A1
