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FDP33N25FAIRCHILN/a50avaiN-Channel UniFETTM MOSFET 250V, 33A, 94m?


FDP33N25 ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) ..
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FDP33N25
N-Channel UniFETTM MOSFET 250V, 33A, 94m?
TM FDPF33N25T N-Channel UniFET MOSFET March 2013 FDPF33N25T TM N-Channel UniFET MOSFET 250 V, 33 A, 94 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) @ V = 10 V, I = 16.5 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ.36.8 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low Crss (Typ. 39 pF) energy strength. This device family is suitable for switching • Improved dv/dt Capability power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic Applications lamp ballasts. •PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D G G D TO-220F S S Absolute Maximum Ratings Symbol Parameter FDPF33N25T Unit V Drain-Source Voltage 250 V DSS I Drain Current - Continuous (T = 25C) 33* A D C - Continuous (T = 100C) 20.4* A C (Note 1) I Drain Current - Pulsed A DM 132* V Gate-Source voltage  30 V GSS (Note 2) E Single Pulsed Avalanche Energy 918 mJ AS (Note 1) I Avalanche Current 33 A AR (Note 1) E Repetitive Avalanche Energy 23.5 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 4.5 V/ns P Power Dissipation (T = 25C) 37 W D C - Derate above 25C 0.29 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDPF33N25T Unit R Thermal Resistance, Junction-to-Case, Max. 3.4 C/W JC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 C/W JA ©2007 1 FDPF33N25T Rev. C0
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