FDP3205 ,N-Channel PowerTrench® MOSFET 55V, 100A, 7.5mOhmsFeatures Description•R = 6.1mΩ ( Typ.)@ V = 10V, I = 59A • This N-Channel MOSFET is produced using ..
FDP33N25 ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) ..
FDP3632 ,N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhmFDB3632 / FDP3632 / FDI3632July 2002FDB3632 / FDP3632 / FDI3632®N-Channel UltraFET Trench MOSFET100 ..
FDP3651U ,N-Channel PowerTrench?MOSFET 100V, 80A, 18m?Applications•R = 15 mΩ ( Typ.)@ V = 10 V, I = 80 ADS(on) GS D• Consumer Appliances• High Performa ..
FDP3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16mOhmFDB3652 / FDP3652 / FDI3652July 2002FDB3652 / FDP3652 / FDI3652®N-Channel PowerTrench MOSFET100V, 6 ..
FDP3672 ,N-Channel PowerTrench MOSFET, 105V, 41A, 0.033 Ohms @ VGS = 10V, TO-220 PackageFDP3672September 2003FDP3672®N-Channel PowerTrench MOSFET105V, 41A, 33mΩ
FQA13N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 13.5A, 500V, R = 0.48Ω @V = 10 VDS(on ..
FQA13N50CF ,N-Channel QFET?FRFET?MOSFET 500V, 15A, 480m?Features Description• 15 A, 500 V, R = 48 mΩ (Max.) @ V = 10 V, This N-Channel enhancement mode pow ..
FQA13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.6A, 800V, R = 0.75Ω @V = 10 VDS(on ..
FQA13N80 ,800V N-Channel MOSFETFQA13N80March 2001TMQFETFQA13N80800V N-Channel MOSFET
FQA13N80_F109 ,N-Channel QFET?MOSFET 800V, 12.6A, 750m?Features Description• 12.6 A, 800 V, R = 750 mΩ (Max.) @ V = 10 V This N-Channel enhancement mode p ..
FQA13N80_F109 ,N-Channel QFET?MOSFET 800V, 12.6A, 750m?®FQA13N80_F109 N-Channel QFET MOSFETApril 2013FQA13N80_F109®N-Channel QFET MOSFET800 V, 12.6 A, 75 ..
FDP3205
N-Channel PowerTrench® MOSFET 55V, 100A, 7.5mOhms
® FDP3205 N-Channel PowerTrench MOSFET May 2008 FDP3205 ® N-Channel PowerTrench MOSFET 55V, 100A, 7.5mΩ Features Description •R = 6.1mΩ ( Typ.)@ V = 10V, I = 59A • This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductor’s advanced PowerTrench process that has • High performance trench technology for extermly low R been especially tailored to minimize the on-state resistance DS(on) and yet maintain superior switching performance. • High power and current handing capability • RoHS compliant D G TO-220 G D S FDP Series S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 55 V DSS V Gate to Source Voltage ±20 V GSS o I Drain Current -Continuous (T = 25 C) (Note 1) 100 A D C I Drain Current - Pulsed 390 A DM E Single Pulsed Avalanche Energy (Note 2) 365 mJ AS o (T = 25 C) 150 W C P Power Dissipation D o o - Derate above 25C1.0W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Thermal Characteristics Symbol Parameter Ratings Units R Thermal Resistance, Junction to Case 1.0 θJC o C/W R Thermal Resistance, Junction to Ambient 62.5 θJA ©2008 1 FDP3205 Rev. A
