FDP2710 ,N-Channel PowerTrench?MOSFET 250V, 50A, 42.5m?Applications • High Power and Current Handing Capability• Consumer Appliances• Ro ..
FDP3205 ,N-Channel PowerTrench® MOSFET 55V, 100A, 7.5mOhmsFeatures Description•R = 6.1mΩ ( Typ.)@ V = 10V, I = 59A • This N-Channel MOSFET is produced using ..
FDP33N25 ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) ..
FDP3632 ,N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhmFDB3632 / FDP3632 / FDI3632July 2002FDB3632 / FDP3632 / FDI3632®N-Channel UltraFET Trench MOSFET100 ..
FDP3651U ,N-Channel PowerTrench?MOSFET 100V, 80A, 18m?Applications•R = 15 mΩ ( Typ.)@ V = 10 V, I = 80 ADS(on) GS D• Consumer Appliances• High Performa ..
FDP3652 ,N-Channel PowerTrench ?MOSFET 100V, 61A, 16mOhmFDB3652 / FDP3652 / FDI3652July 2002FDB3652 / FDP3652 / FDI3652®N-Channel PowerTrench MOSFET100V, 6 ..
FQA13N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 13.5A, 500V, R = 0.48Ω @V = 10 VDS(on ..
FQA13N50CF ,N-Channel QFET?FRFET?MOSFET 500V, 15A, 480m?Features Description• 15 A, 500 V, R = 48 mΩ (Max.) @ V = 10 V, This N-Channel enhancement mode pow ..
FQA13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.6A, 800V, R = 0.75Ω @V = 10 VDS(on ..
FQA13N80 ,800V N-Channel MOSFETFQA13N80March 2001TMQFETFQA13N80800V N-Channel MOSFET
FQA13N80_F109 ,N-Channel QFET?MOSFET 800V, 12.6A, 750m?Features Description• 12.6 A, 800 V, R = 750 mΩ (Max.) @ V = 10 V This N-Channel enhancement mode p ..
FQA13N80_F109 ,N-Channel QFET?MOSFET 800V, 12.6A, 750m?®FQA13N80_F109 N-Channel QFET MOSFETApril 2013FQA13N80_F109®N-Channel QFET MOSFET800 V, 12.6 A, 75 ..
FDP2710
N-Channel PowerTrench?MOSFET 250V, 50A, 42.5m?
® FDP2710 N-Channel PowerTrench MOSFET March 2013 FDP2710 tm ® N-Channel PowerTrench MOSFET 250 V, 50 A, 42.5 mΩ Features General Description •R = 36.3 mΩ ( Typ.)@ V = 10 V, I = 25 A This N-Channel MOSFET is producedusing Fairchild Semicon- DS(on) GS D ® ® ductor ’s advanced PowerTrench process that has been tai- • Fast Switching Speed lored to minimize the on-state resistance while maintaining superior switching performance. • Low Gate Charge • High Performance Trench technology for Extremely Low R DS(on) Applications • High Power and Current Handing Capability • Consumer Appliances • RoHS Compliant • Synchronous Rectification D G TO-220 G D S S Absolute Maximum Ratings Symbol Parameter FDP2710 Unit V Drain-Source Voltage 250 V DS V Gate-Source voltage ± 30 V GS I Drain Current - Continuous (T = 25°C) 50 A D C - Continuous (T = 100°C) 31.3 A C (Note 1) I Drain Current - Pulsed A DM See Figure 9 (Note 2) E Single Pulsed Avalanche Energy 145 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 260 W D C - Derate above 25°C 2.1 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDP2710 Unit R Thermal Resistance, Junction-to-Case, Max. 0.48 °C/W θJC R Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W θJA ©2007 1 FDP2710 Rev. C0
