FDP26N40 ,N-Channel UniFETTM MOSFET 400V, 26A, 160m?Applications• Uninterruptible Power Supply• AC-DC Power SupplyDGG DTO-220 SSoMOSFET Maximum ..
FDP2710 ,N-Channel PowerTrench?MOSFET 250V, 50A, 42.5m?Applications • High Power and Current Handing Capability• Consumer Appliances• Ro ..
FDP3205 ,N-Channel PowerTrench® MOSFET 55V, 100A, 7.5mOhmsFeatures Description•R = 6.1mΩ ( Typ.)@ V = 10V, I = 59A • This N-Channel MOSFET is produced using ..
FDP33N25 ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) ..
FDP3632 ,N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhmFDB3632 / FDP3632 / FDI3632July 2002FDB3632 / FDP3632 / FDI3632®N-Channel UltraFET Trench MOSFET100 ..
FDP3651U ,N-Channel PowerTrench?MOSFET 100V, 80A, 18m?Applications•R = 15 mΩ ( Typ.)@ V = 10 V, I = 80 ADS(on) GS D• Consumer Appliances• High Performa ..
FQA12N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 12A, 600V, R = 0.7 Ω @ V = 10 VDS(on) ..
FQA13N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 13.5A, 500V, R = 0.48Ω @V = 10 VDS(on ..
FQA13N50CF ,N-Channel QFET?FRFET?MOSFET 500V, 15A, 480m?Features Description• 15 A, 500 V, R = 48 mΩ (Max.) @ V = 10 V, This N-Channel enhancement mode pow ..
FQA13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.6A, 800V, R = 0.75Ω @V = 10 VDS(on ..
FQA13N80 ,800V N-Channel MOSFETFQA13N80March 2001TMQFETFQA13N80800V N-Channel MOSFET
FQA13N80_F109 ,N-Channel QFET?MOSFET 800V, 12.6A, 750m?Features Description• 12.6 A, 800 V, R = 750 mΩ (Max.) @ V = 10 V This N-Channel enhancement mode p ..
FDP26N40
N-Channel UniFETTM MOSFET 400V, 26A, 160m?
TM FDP26N40 N-Channel UniFET MOSFET March 2013 FDP26N40 TM N-Channel UniFET MOSFET 400 V, 26 A, 160 m Features Description TM ® UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 130 m (Typ.) @ V = 10 V, I = 13 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 48 nC) This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche • Low C (Typ. 30 pF) rss energy strength. This device family is suitable for switching • 100% Avalanche Tested power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic • RoHS Compliant lamp ballasts. Applications • Uninterruptible Power Supply • AC-DC Power Supply D G G D TO-220 S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDP26N40 Unit V Drain to Source Voltage 400 V DSS V Gate to Source Voltage ±30 V GSS o - Continuous (T = 25 C) 26 C I Drain Current A D o - Continuous (T = 100 C) 15.6 C I Drain Current - Pulsed (Note 1) 104 A DM E Single Pulsed Avalanche Energy (Note 2) 1352 mJ AS I Avalanche Current (Note 1) 26 A AR E Repetitive Avalanche Energy (Note 1) 26.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns o (T = 25 C) 265 W C P Power Dissipation D o o - Derate above 25C2.0W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDP26N40 Unit R Thermal Resistance, Junction to Case, Max. 0.5 JC o R Thermal Resistance, Case to Sink, Typ. 0.5 C/W CS R Thermal Resistance, Junction to Ambient, Max. 62.5 JA 1 ©2008 FDP26N40 Rev. C0
