FDP2670 ,200V N-Channel PowerTrench MOSFETFeaturesThis N-Channel MOSFET has been designed• 19 A, 200 V. R = 130 mΩ @ V = 10 VDS(ON) GSspecifi ..
FDP26N40 ,N-Channel UniFETTM MOSFET 400V, 26A, 160m?Applications• Uninterruptible Power Supply• AC-DC Power SupplyDGG DTO-220 SSoMOSFET Maximum ..
FDP2710 ,N-Channel PowerTrench?MOSFET 250V, 50A, 42.5m?Applications • High Power and Current Handing Capability• Consumer Appliances• Ro ..
FDP3205 ,N-Channel PowerTrench® MOSFET 55V, 100A, 7.5mOhmsFeatures Description•R = 6.1mΩ ( Typ.)@ V = 10V, I = 59A • This N-Channel MOSFET is produced using ..
FDP33N25 ,N-Channel UniFETTM MOSFET 250V, 33A, 94m?Features DescriptionTM ®UniFET MOSFET is Fairchild Semiconductor ’s high voltage •R = 94 m (Max.) ..
FDP3632 ,N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhmFDB3632 / FDP3632 / FDI3632July 2002FDB3632 / FDP3632 / FDI3632®N-Channel UltraFET Trench MOSFET100 ..
FQA11N90C_F109 ,N-Channel QFET?MOSFET 900V, 11.0A, 1.1?Features• 11 A, 900 V, R = 1.1 Ω (Max.) @ V = 10 V, This N-Channel enhancement mode power MOSFET is ..
FQA12N60 ,600V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect 12A, 600V, R = 0.7 Ω @ V = 10 VDS(on) ..
FQA13N50C ,500V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 13.5A, 500V, R = 0.48Ω @V = 10 VDS(on ..
FQA13N50CF ,N-Channel QFET?FRFET?MOSFET 500V, 15A, 480m?Features Description• 15 A, 500 V, R = 48 mΩ (Max.) @ V = 10 V, This N-Channel enhancement mode pow ..
FQA13N80 ,800V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 12.6A, 800V, R = 0.75Ω @V = 10 VDS(on ..
FQA13N80 ,800V N-Channel MOSFETFQA13N80March 2001TMQFETFQA13N80800V N-Channel MOSFET
FDP2670
200V N-Channel PowerTrench MOSFET
FDP2670/FDB2670 November 2001 FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 19 A, 200 V. R = 130 mΩ @ V = 10 V DS(ON) GS specifically for switching on the primary side in the isolated DC/DC converter application. Any application • Low gate charge (27 nC typical) requiring a 200V MOSFETs with low on-resistance and fast switching will benefit. • Fast switching speed These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable • High performance trench technology for extremely RDS specifications. (ON) low R DS(ON) The result is a MOSFET that is easy and safer to drive • High power and current handling capability (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. D D G G G S TO-220 TO-263AB D FDP Series FDB Series S S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 200 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current – Continuous (Note 1) 19 A D – Pulsed (Note 1) 40 A P D Total Power Dissipation @ T = 25°C 93 W C Derate above 25°C 0.63 W°/C dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns T , T Operating and Storage Junction Temperature Range –65 to +175 J STG °C Thermal Characteristics R Thermal Resistance, Junction-to-Case 1.6 θJC °C/W R θJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB2670 FDB2670 13’’ 24mm 800 units FDP2670 FDP2670 Tube n/a 45 units 2001 FDP2670/FDB2670 Rev C1(W)
