FDP18N50 ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Features DescriptionTM ®• R = 265 mΩ (Max.) @ V = 10 V, I = 9A UniFET MOSFET is Fairchild Semicond ..
FDP18N50 ,N-Channel UniFETTM MOSFET 500V, 18A, 265m?Applications(PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.• LCD/LED/PD ..
FDP24N40 ,N-Channel UniFETTM MOSFET 400V, 24A, 175m?Applications• Uninterruptible Power Supply• AC-DC Power SupplyDGGDTO-220SSoMOSFET Maximum Ratings ..
FDP2532 ,N-Channel PowerTrench ?MOSFET 150V, 79A, 16mOhmFDB2532 / FDP2532 / FDI2532August 2002FDB2532 / FDP2532 / FDI2532®N-Channel PowerTrench MOSFET150V, ..
FDP2532. ,N-Channel PowerTrench ?MOSFET 150V, 79A, 16mOhmFDB2532 / FDP2532 / FDI2532August 2002FDB2532 / FDP2532 / FDI2532®N-Channel PowerTrench MOSFET150V, ..
FDP2552 ,N-Channel PowerTrench ?MOSFET 150V, 37A, 36mOhmFDB2552 / FDP2552June 2002FDB2552 / FDP2552®N-Channel PowerTrench MOSFET150V, 37A, 36mΩ
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FQA11N40 ,400V N-Channel MOSFET
FQA11N90 ,900V N-Channel MOSFETSeptember 2000TMQFET QFET QFET QFETFQA11N90900V N-Channel MOSFET
FQA11N90 ,900V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 11.4A, 900V, R = 0.96 Ω @ V = 10 VDS( ..
FDP18N50
N-Channel UniFETTM MOSFET 500V, 18A, 265m?
TM FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFET MOSFET April 2013 FDP18N50 / FDPF18N50 / FDPF18N50T TM N-Channel UniFET MOSFET 500 V, 18 A, 265 mΩ Features Description TM ® • R = 265 mΩ (Max.) @ V = 10 V, I = 9A UniFET MOSFET is Fairchild Semiconductor ’s high voltage D DS(on) GS MOSFET family based on planar stripe and DMOS technology. • Low Gate Charge (Typ. 45 nC) This MOSFET is tailored to reduce on-state resistance, and to • Low Crss (Typ. 25 pF) provide better switching performance and higher avalanche • 100% Avalanche Tested energy strength. This device family is suitable for switching power converter applications such as power factor correction Applications (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply D G G G D D S S TO-220F TO-220 S Absolute Maximum Ratings FDPF18N50 / Symbol Parameter FDP18N50 Unit FDPF18N50T V Drain-Source Voltage 500 V DSS I Drain Current - Continuous (T = 25°C) 18 18 * A D C - Continuous (T = 100°C) 10.8 10.8 * A C (Note 1) I Drain Current - Pulsed 72 72 * A DM V Gate-Source voltage ±30 V GSS (Note 2) E Single Pulsed Avalanche Energy 945 mJ AS I Avalanche Current (Note 1) 18 A AR E Repetitive Avalanche Energy (Note 1) 23.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns P Power Dissipation (T = 25°C) 235 38.5 W D C - Derate above 25°C 1.88 0.3 W/°C T T Operating and Storage Temperature Range -55 to +150 °C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 °C 1/8” from Case for 5 Seconds * Drain current limited by maximum junction temperature Thermal Characteristics FDPF18N50 / Symbol Parameter FDP18N50 Unit FDPF18N50T R Thermal Resistance, Junction-to-Case, Max. 0.53 3.3 °C/W θJC R Thermal Resistance, Case-to-Sink, Typ. 0.5 -- °C/W θCS R Thermal Resistance, Junction-to-Ambient, Max. 62.5 62.5 °C/W θJA ©2012 1 FDP18N50 / FDPF18N50 / FDPF18N50T Rev. C1
