FDP150N10 ,N-Channel PowerTrench?MOSFET 100V, 57A, 15m?General Description•R = 12 mΩ ( Typ.) @ V = 10 V, I = 49 A This N-Channel MOSFET is produced using ..
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FDP150N10
N-Channel PowerTrench?MOSFET 100V, 57A, 15m?
® FDP150N10 N-Channel PowerTrench MOSFET March 2013 FDP150N10 ® N-Channel PowerTrench MOSFET 100 V, 57 A, 15 mΩ Features General Description •R = 12 mΩ ( Typ.) @ V = 10 V, I = 49 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® ® Semiconductor ’s PowerTrench process that has been tailored • Fast Switching Speed to minimize the on-state resistance while maintaining superior switching performance. • Low Gate Charge • High Performance Trench Technology for Extremely Low Applications R DS(on) • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • Battery Protection Circuit • RoHS Compliant • Motor drives and Uninterruptible Power Supplies • Micro Solar Inverter D G G D S TO-220 S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDP150N10 Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GSS o -Continuous (T = 25 C) 57 A C I Drain Current D o -Continuous (T = 100 C) 40 A C I Drain Current - Pulsed (Note 1) 228 A DM E Single Pulsed Avalanche Energy (Note 2) 132 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 7.5 V/ns o (T = 25 C) 110 W C P Power Dissipation D o o - Derate above 25C0.88W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds Thermal Characteristics Symbol Parameter FDP150N10 Unit R Thermal Resistance, Junction to Case, Max. 1.13 θJC o R Thermal Resistance, Case to Sink Typ. 0.5 C/W θCS R Thermal Resistance, Junction to Ambient, Max. 62.5 θJA ©2008 1 FDP150N10 Rev. C0
