FDP10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 75A, 10.5mOhmApplications•r = 9.5mΩ (Typ.), V = 10V, I = 75A Motor / Body Load ControlDS(ON) GS DQ (tot) = 28 ..
FDP14AN06LA0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 PackageFDB14AN06LA0 / FDP14AN06LA0January 2004FDB14AN06LA0 / FDP14AN06LA0®N-Channel PowerTrench MOSFET60V, ..
FDP14AN06LA0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 PackageApplications•r = 12.8mΩ (Typ.), V = 5V, I = 60A Motor / Body Load ControlDS(ON) GS DQ (tot) = 24 ..
FDP150N10 ,N-Channel PowerTrench?MOSFET 100V, 57A, 15m?General Description•R = 12 mΩ ( Typ.) @ V = 10 V, I = 49 A This N-Channel MOSFET is produced using ..
FDP15N50 ,15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETFeatures Low Gate Charge Q results in Simple DriveSwitch Mode Power Supplies(SMPS), such as gRequi ..
FDP18N20F ,N-Channel UniFETTM FRFET?MOSFET 200V, 18A, 140m?Features Description•R = 0.12Ω ( Typ.)@ V = 10V, I = 9A These N-Channel enhancement mode power fiel ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FQA11N40 ,400V N-Channel MOSFET
FDP10AN06A0
N-Channel PowerTrench ?MOSFET 60V, 75A, 10.5mOhm
FDB10AN06A0 / FDP10AN06A0 July 2002 FDB10AN06A0 / FDP10AN06A0 ® N-Channel PowerTrench MOSFET 60V, 75A, 10.5mΩ Features Applications •r = 9.5mΩ (Typ.), V = 10V, I = 75A Motor / Body Load Control DS(ON) GS D Q (tot) = 28nC (Typ.), V = 10VABS Systems g GS Low Miller ChargePowertrain Management Low Qrr Body DiodeInjection Systems UIS Capability (Single Pulse and Repetitive Pulse)DC-DC converters and Off-line UPS Qualified to AEC Q101Distributed Power Architectures and VRMs Primary Switch for 12V and 24V systems Formerly developmental type 82560 D DRAIN GATE SOURCE (FLANGE) DRAIN G GATE DRAIN SOURCE (FLANGE) S TO-220AB TO-263AB FDP SERIES FDB SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 75 A Continuous (T = 25 C, V = 10V) C GS o I Continuous (T = 100 C, V = 10V) 54 A D C GS o o Continuous (T = 25 C, V = 10V) with R = 43 C/W) 12 A amb GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 429 mJ AS Power dissipation 135 W P D o o Derate above 25C0.9W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220, TO-263 1.11 C/W θJC o R Thermal Resistance Junction to Ambient TO-220, TO-263 (Note 2) 62 C/W θJA 2 o R Thermal Resistance Junction to Ambient TO-263, 1in copper pad area 43 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDB10AN06A0 / FDP10AN06A0 Rev. A
