FDP090N10 ,N-Channel PowerTrench?MOSFET 100V, 75A, 9m?General Description•R = 7.2 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is producedusing ..
FDP100N10 ,N-Channel PowerTrench?MOSFET 100V, 75A, 10m?ApplicationsRDS(on)• Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curre ..
FDP10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 75A, 10.5mOhmApplications•r = 9.5mΩ (Typ.), V = 10V, I = 75A Motor / Body Load ControlDS(ON) GS DQ (tot) = 28 ..
FDP14AN06LA0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 PackageFDB14AN06LA0 / FDP14AN06LA0January 2004FDB14AN06LA0 / FDP14AN06LA0®N-Channel PowerTrench MOSFET60V, ..
FDP14AN06LA0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 PackageApplications•r = 12.8mΩ (Typ.), V = 5V, I = 60A Motor / Body Load ControlDS(ON) GS DQ (tot) = 24 ..
FDP150N10 ,N-Channel PowerTrench?MOSFET 100V, 57A, 15m?General Description•R = 12 mΩ ( Typ.) @ V = 10 V, I = 49 A This N-Channel MOSFET is produced using ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FQA11N40 ,400V N-Channel MOSFET
FDP090N10
N-Channel PowerTrench?MOSFET 100V, 75A, 9m?
® FDP090N10 N-Channel PowerTrench MOSFET April 2013 FDP090N10 tm ® N-Channel PowerTrench MOSFET 100 V, 75 A, 9 mΩ Features General Description •R = 7.2 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is producedusing Fairchild Semicon- DS(on) GS D ® ® ductor ’s advanced PowerTrench process that has been tai- • Fast Switching Speed lored to minimize the on-state resistance while maintaining superior switching performance. • Low Gate Charge • High Performance Trench Technology for Extremely Low Applications R DS(on) • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handling Capability • Battery Protection Circuit • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D G TO-220 G S D S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDP090N10 Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GSS o I Drain Current -Continuous (T = 85 C) 75 A D C I Drain Current - Pulsed (Note 1) 300 A DM E Single Pulsed Avalanche Energy (Note 2) 309 mJ AS I Avalanche Current (Note 1) 75 A AR E Repetitive Avalanche Energy (Note 1) 20.8 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.6 V/ns o (T = 25 C) 208 W C P Power Dissipation D o o - Derate above 25C1.39W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP090N10 Unit R Thermal Resistance, Junction to Case, Max. 0.72 θJC o R Thermal Resistance, Case to Sink Typ. 0.5 C/W θCS R Thermal Resistance, Junction to Ambient, Max. 62.5 θJA ©2008 1 FDP090N10 Rev. C1
