FDP054N10 ,N-Channel PowerTrench?MOSFET 100V, 144A, 5.5m?Applications• High Power and Current Handling Capability• Synchronous Rectification for ATX / Serve ..
FDP060AN08A0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-220AB PackageApplications•r = 4.8mΩ (Typ.), V = 10V, I = 80A 42V Automotive Load ControlDS(ON) GS DQ (tot) = ..
FDP090N10 ,N-Channel PowerTrench?MOSFET 100V, 75A, 9m?General Description•R = 7.2 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is producedusing ..
FDP100N10 ,N-Channel PowerTrench?MOSFET 100V, 75A, 10m?ApplicationsRDS(on)• Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curre ..
FDP10AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 75A, 10.5mOhmApplications•r = 9.5mΩ (Typ.), V = 10V, I = 75A Motor / Body Load ControlDS(ON) GS DQ (tot) = 28 ..
FDP14AN06LA0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 61A, 0.014 Ohm, TO-220 PackageFDB14AN06LA0 / FDP14AN06LA0January 2004FDB14AN06LA0 / FDP14AN06LA0®N-Channel PowerTrench MOSFET60V, ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FQA11N40 ,400V N-Channel MOSFET
FDP054N10
N-Channel PowerTrench?MOSFET 100V, 144A, 5.5m?
® FDP054N10 N-Channel PowerTrench MOSFET March 2013 FDP054N10 ® N-Channel PowerTrench MOSFET 100 V, 144 A, 5.5 mΩ Features Description •R = 4.6 mΩ ( Typ.)@ V = 10 V, I = 75 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® ® Semiconductor ’s advanced PowerTrench process that has • Fast Switching Speed been tailored to minimize the on-state resistance while maintaining superior switching performance. • Low Gate Charge • High Performance Trench Technology for Extremely Low R DS(on) Applications • High Power and Current Handling Capability • Synchronous Rectification for ATX / Server / Telecom PSU • RoHS Compliant • Battery Protection Circuit • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D G G TO-220 D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter FDP054N10 Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GSS o - Continuous (T = 25 C, Silicon Limited) 144* C o I Drain Current - Continuous (T = 100 C, Silicon Limited) 102 A D C o - Continuous (T = 25 C, Package Limited) 120 C I Drain Current - Pulsed (Note 1) 576 A DM E Single Pulsed Avalanche Energy (Note 2) 1153 mJ AS dv/dt Peak Diode Avalanche Energy (Note 3) 6 V/ns o (T = 25 C) 263 W C P Power Dissipation D o o - Derate above 25C1.75W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDP054N10 Unit R Thermal Resistance, Junction to Case, Max. 0.57 θJC o C/W R Thermal Resistance, Junction to Ambient, Max. 62.5 θJA ©2009 1 FDP054N10 Rev. C2
