FDP047N10 ,N-Channel PowerTrench?MOSFET 100V, 164A, 4.7m?General Description•R = 3.9 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is producedusing ..
FDP047N10 ,N-Channel PowerTrench?MOSFET 100V, 164A, 4.7m?ApplicationsRDS(on) • Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curr ..
FDP050AN06A0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-220ABFDB050AN06A0 / FDP050AN06A0February 2003FDB050AN06A0 / FDP050AN06A0®N-Channel PowerTrench MOSFET60 ..
FDP054N10 ,N-Channel PowerTrench?MOSFET 100V, 144A, 5.5m?Applications• High Power and Current Handling Capability• Synchronous Rectification for ATX / Serve ..
FDP060AN08A0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 75V, 80A, 0.006 Ohms @ VGS = 10V, TO-220AB PackageApplications•r = 4.8mΩ (Typ.), V = 10V, I = 80A 42V Automotive Load ControlDS(ON) GS DQ (tot) = ..
FDP090N10 ,N-Channel PowerTrench?MOSFET 100V, 75A, 9m?General Description•R = 7.2 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is producedusing ..
FPX0368S , STANDARD CRYSTALS
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FDP047N10
N-Channel PowerTrench?MOSFET 100V, 164A, 4.7m?
® FDP047N10 N-Channel PowerTrench MOSFET March 2013 FDP047N10 tm ® N-Channel PowerTrench MOSFET 100 V, 164 A, 4.7 mΩ Description General Description •R = 3.9 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is producedusing Fairchild Semicon- DS(on) GS D ® ® ductor ’s advance PowerTrench process that has been tailored • Fast Switching Speed to minimize the on-state resistance while maintaining superior switching performance. • Low Gate Charge • High Performance Trench Technology for Extremely Low Applications R DS(on) • Synchronous Rectification for ATX / Server / Telecom PSU • High Power and Current Handing Capability • Battery Protection Circuit • RoHS Compliant • Motor Drives and Uninterruptible Power Supplies • Micro Solar Inverter D G TO-220 G D S S o MOSFET Maximum Ratings T = 25 C unless otherwise noted* C Symbol Parameter FDP047N10 Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage ±20 V GSS o 164* A Drain Current - Continuous (T = 25 C, Silicon Limited) C o I - Continuous (T = 100 C, Silicon Limited) 116* A D C o - Continuous (T = 25 C, Package Limited) C 120 A I Drain Current - Pulsed (Note 1) 656* A DM E Single Pulsed Avalanche Energy (Note 2) 1153 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 375 W C P Power Dissipation D o o - Derate above 25C2.5W/ C o T , T Operating and Storage Temperature Range -55 to +175 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8” from Case for 5 Seconds *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol Parameter FDP047N10 Unit R Thermal Resistance, Junction to Case, Max. 0.4 θJC o R Thermal Resistance, Case to Sink Typ. 0.5 C/W θCS R Thermal Resistance, Junction to Ambient, Max. 62.5 θJA ©2008 1 FDP047N10 Rev. C1
