FDP047AN08A0 ,N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.7mOhmFDP047AN08A0April 2002FDP047AN08A0®N-Channel UltraFET Trench MOSFET75V, 80A, 4.7mΩ
FDP047N08 ,N-Channel PowerTrench?MOSFET 75V, 164A, 4.7m?Applications• High Power and Current Handling Capability• Synchronous Rectification for ATX / Serve ..
FDP047N08 ,N-Channel PowerTrench?MOSFET 75V, 164A, 4.7m?Features Description•R = 3.8 mΩ ( Typ.)@ V = 10 V, I = 80 A This N-Channel MOSFET is produced using ..
FDP047N10 ,N-Channel PowerTrench?MOSFET 100V, 164A, 4.7m?General Description•R = 3.9 mΩ ( Typ.) @ V = 10 V, I = 75 A This N-Channel MOSFET is producedusing ..
FDP047N10 ,N-Channel PowerTrench?MOSFET 100V, 164A, 4.7m?ApplicationsRDS(on) • Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curr ..
FDP050AN06A0 ,Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-220ABFDB050AN06A0 / FDP050AN06A0February 2003FDB050AN06A0 / FDP050AN06A0®N-Channel PowerTrench MOSFET60 ..
FPX0368S , STANDARD CRYSTALS
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FDP047AN08A0
N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.7mOhm
FDP047AN08A0 April 2002 FDP047AN08A0 ® N-Channel UltraFET Trench MOSFET 75V, 80A, 4.7mΩ Features Applications •r = 4.0mΩ (Typ.), V = 10V, I = 80A 42V Automotive Load Control DS(ON) GS D Q (tot) = 92nC (Typ.), V = 10VStarter / Alternator Systems g GS Low Miller ChargeElectronic Power Steering Systems Low Qrr Body DiodeElectronic Valve Train Systems UIS Capability (Single Pulse and Repetitive Pulse)DC-DC converters and Off-line UPS Qualified to AEC Q101Distributed Power Architectures and VRMs Primary Switch for 24V and 48V systems Formerly developmental type 82684 D DRAIN SOURCE (FLANGE) DRAIN GATE G TO-220AB S FDP SERIES MOSFET Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 75 V DSS V Gate to Source Voltage ±20 V GS Drain Current o 80 A Continuous (T < 144 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, with R = 62 C/W) 15 A C GS θJA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 600 mJ AS Power dissipation 310 W P D o o Derate above 25C2.0W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Thermal Resistance Junction to Case TO-220 0.48 C/W θJC o R Thermal Resistance Junction to Ambient TO-220 (Note 2) 62 C/W θJA This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http:///products/discrete/reliability/index.html. All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. ©2002 FDP047AN08A0 Rev. A
