FDN8601 ,100V N-Channel PowerTrench?MOSFETApplicationssurface mount package Primary DC-DC Switch Fast switching speed Load Switch 100% UI ..
FDP025N06 ,N-Channel PowerTrench?MOSFET 60V, 265A, 2.5m?Features Description•R = 1.9 mΩ ( Typ.)@ V = 10 V, I = 75 A This N-Channel MOSFET is produced using ..
FDP030N06 ,N-Channel PowerTrench?MOSFET 60V, 193A, 3.2m?ApplicationsRDS(on) • Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curr ..
FDP038AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 80A, 3.8mOhmApplications•r = 3.5mΩ (Typ.), V = 10V, I = 80A Motor / Body Load ControlDS(ON) GS DQ (tot) = 95 ..
FDP047AN08A0 ,N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.7mOhmFDP047AN08A0April 2002FDP047AN08A0®N-Channel UltraFET Trench MOSFET75V, 80A, 4.7mΩ
FDP047N08 ,N-Channel PowerTrench?MOSFET 75V, 164A, 4.7m?Applications• High Power and Current Handling Capability• Synchronous Rectification for ATX / Serve ..
FPX0368S , STANDARD CRYSTALS
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FDN8601
100V N-Channel PowerTrench?MOSFET
® FDN8601 N-Channel PowerTrench MOSFET July 2010 FDN8601 ® � N-Channel PowerTrench MOSFET 100 V, 2.7 A, 109 m� Features General Description This N-Channel MOSFET is produced using Fairchild � Max r = 109 m� at V = 10 V, I = 1.5 A DS(on) GS D ® Semiconductor‘s advanced Power Trench process that has � Max r = 175 m� at V = 6 V, I = 1.2 A DS(on) GS D been optimized for r , switching performance and DS(on) ruggedness. � High performance trench technology for extremely low r DS(on) � High power and current handling capability in a widely used Applications surface mount package � Primary DC-DC Switch � Fast switching speed � Load Switch � 100% UIL tested � RoHS Compliant MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage ±20 V GS -Continuous (Note 1a) 2.7 I A D -Pulsed 12 E Single Pulse Avalanche Energy (Note 3) 13 mJ AS Power Dissipation (Note 1a) 1.5 P W D Power Dissipation (Note 1b) 0.6 T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case (Note 1) 75 �JC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 80 �JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 8601 FDN8601 SSOT-3 7 ’’ 8 mm 3000 units 1 ©2010 FDN8601 Rev. C
