FDN5630_NL ,60V N-Channel PowerTrench MOSFETApplications DC/DC converter Motor drivesD DSGSTMGSuperSOT -3Absolute Maximum Ratings T = 25 C ..
FDN5632N_F085 ,N-Channel Logic Level PowerTrench?MOSFET 60V, 1.6A, 98m?Applications R = 98mΩ at V = 4.5V, I = 1.6ADS(on) GS D DC/DC converter R = 82mΩ at V = 10V, I = ..
FDN8601 ,100V N-Channel PowerTrench?MOSFETApplicationssurface mount package Primary DC-DC Switch Fast switching speed Load Switch 100% UI ..
FDP025N06 ,N-Channel PowerTrench?MOSFET 60V, 265A, 2.5m?Features Description•R = 1.9 mΩ ( Typ.)@ V = 10 V, I = 75 A This N-Channel MOSFET is produced using ..
FDP030N06 ,N-Channel PowerTrench?MOSFET 60V, 193A, 3.2m?ApplicationsRDS(on) • Synchronous Rectification for ATX / Server / Telecom PSU• High Power and Curr ..
FDP038AN06A0 ,N-Channel PowerTrench ?MOSFET 60V, 80A, 3.8mOhmApplications•r = 3.5mΩ (Typ.), V = 10V, I = 80A Motor / Body Load ControlDS(ON) GS DQ (tot) = 95 ..
FPX0368S , STANDARD CRYSTALS
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFeaturesThese N-Channel enhancement mode power field effect 10A, 600V, R = 0.73Ω @V = 10 VDS(on) ..
FQA10N80 ,800V N-Channel MOSFETSeptember 2000TMQFETFQA10N80800V N-Channel MOSFET
FQA10N80C ,800V N-Channel Advance Q-FET C-SeriesFQA10N80CTMQFETFQA10N80C800V N-Channel MOSFET
FDN5630_NL
60V N-Channel PowerTrench MOSFET
FDN5630 FDN5630 60V N-Channel PowerTrench MOSFET General Description Features 1.7 A, 60 V.RΩ = 10 V GS RΩ @ V. = 6 V GS either synchronous or conventional switching PWM faster switching than other MOSFETs with comparable V R specifications. The result is higher overall DS(ON) TM Applications DD S GS TM G SuperSOT -3 Absolute Maximum Ratings T 25 =C unless otherwise noted A Symbol Parameter Ratings Units VSe VltoV VGSSe Vltoe±V I i(Note 1a)7AD - Plsu Psneiosiir SoiPwo(Note 1a)5WD (Note 1b) T, TttiioJstg °C Thermal Characteristics laist Jmtoiib(Note 1a) °RWθJA laist Jetoi(Note 1) °RWθJC Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity 7m8mts FDN5630 Rev. C2000 3000 uniFDN56305630 C/ 75on-tunc-Casance, ResTherm C/ 250enton-tunc-Aance, ResTherm -55 t +150peratOperaton Temure Rangeorage Jng and Sunc 460. 0.ngle Operatpaton fr Di 10ed 1.- ContnuousDrain Current 20ageGatourc-S 60Draiagen-SourcDS Motor drives DC/DC converter DS(ON) in SOT23 footprint. - 3 provides low RSuperSOT efficiency with less board space. ery fast switching. footprint. Fairchild’s PowerTrench technology provides Low gate charge. DS(ON) in a small SOT23This MOSFET features very low R controllers. Optimized for use in high frequency DC/DC converters. DS(ON) = 0.120 to improve the overall efficiency of DC/DC converters using DS(ON) @ V = 0.100 This N-Channel MOSFET has been designed specifically March 2000
