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FDN5618PFAIRCHILDN/a3000avai60V P-Channel Logic Level PowerTrench MOSFET


FDN5618P ,60V P-Channel Logic Level PowerTrench MOSFETFeaturesThis 60V P-Channel MOSFET uses Fairchild’s high• –1.25 A, –60 V. R = 0.170 Ω @ V = –10 VDS( ..
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FDN5618P
60V P-Channel Logic Level PowerTrench MOSFET
FDN5618P October 2000 FDN5618P     60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild’s high • –1.25 A, –60 V. R = 0.170 Ω @ V = –10 V DS(ON) GS voltage PowerTrench process. It has been optimized for R = 0.230 Ω @ V = –4.5 V DS(ON) GS power management applications. • Fast switching speed Applications • DC-DC converters • High performance trench technology for extremely low R DS(ON) • Load switch • Power management D D S S G TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –60 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 1a) –1.25 A D – Pulsed –10 Maximum Power Dissipation (Note 1a) 0.5 W P D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 75 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 618 FDN5618P 7’’ 8mm 3000 units 2000 FDN5618P Rev C(W)
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