FDN372S ,30V N-Channel PowerTrench SyncFETFeatures The FDN372S is designed to replace a single MOSFET • 2.6 A, 30 V. R = 40 mΩ @ V = 10 V D ..
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FDN5618P ,60V P-Channel Logic Level PowerTrench MOSFETFeaturesThis 60V P-Channel MOSFET uses Fairchild’s high• –1.25 A, –60 V. R = 0.170 Ω @ V = –10 VDS( ..
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FDN5632N_F085 ,N-Channel Logic Level PowerTrench?MOSFET 60V, 1.6A, 98m?Applications R = 98mΩ at V = 4.5V, I = 1.6ADS(on) GS D DC/DC converter R = 82mΩ at V = 10V, I = ..
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FPN660A ,PNP Low Saturation Transistorapplications involving pulsed or low duty cycle operations.3) All voltage (V) and currents (A) are ..
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FPNH10 ,NPN RF TransistorFPNH10FPNH10C TO-92BENPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifie ..
FPX0368S , STANDARD CRYSTALS
FQA10N60C ,600V N-Channel Advance Q-FET C-SeriesFQA10N60CTMQFETFQA10N60C600V N-Channel MOSFET
FDN372S
30V N-Channel PowerTrench SyncFET
FDN372S September 2002 FDN372S ™ 30V N-Channel PowerTrench SyncFET General Description Features The FDN372S is designed to replace a single MOSFET • 2.6 A, 30 V. R = 40 mΩ @ V = 10 V DS(ON) GS and Schottky diode, used in synchronous DC-DC R = 50 mΩ @ V = 4.5 V DS(ON) GS power supplies, with a single integrated component. This 30V MOSFET is designed to maximize power conversion efficiency with low Rds(on) and low gate charge. The FDN372S includes an integrated Schottky • Low gate charge diode using Fairchild Semiconductor’s monolithic SyncFET process, making it ideal as the low side • Fast switching speed switch in a synchronous converter. • High performance trench technology for extremely Applications low RDS(ON) • DC-DC Converter • Motor Drives D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ± 16 V GSS I Drain Current – Continuous (Note 1a) 2.6 A D – Pulsed 10 Power Dissipation for Single Operation (Note 1a) 0.5 P W D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 250 R °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 75 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 372 FDN372S 7’’ 8mm 3000 units FDN372S Rev C(W) 2002
