FDN361AN ,N-Channel, Logic Level, PowerTrench TMGeneral DescriptionThis N-Channel Logic Level MOSFET is produced using• 1.8 A, 30 V. R = 0.100 Ω @ ..
FDN371N ,20V N-Channel PowerTrench MOSFETapplications.• Low gate charge (7.6 nC typical)• Load switch• Fast switching speed• Battery protec ..
FDN371N ,20V N-Channel PowerTrench MOSFETFDN371NFDN371N® ®PowerTrenchThis 20V N-Channel MOSFET uses Fairchild’s high• 2.5 A, 20 V. R = 50 m ..
FDN372S ,30V N-Channel PowerTrench SyncFETFeatures The FDN372S is designed to replace a single MOSFET • 2.6 A, 30 V. R = 40 mΩ @ V = 10 V D ..
FDN5618 ,60V P-Channel Logic Level PowerTrench MOSFETApplications• DC-DC converters • High performance trench technology for extremelylow RDS(ON)• Load ..
FDN5618P ,60V P-Channel Logic Level PowerTrench MOSFETFeaturesThis 60V P-Channel MOSFET uses Fairchild’s high• –1.25 A, –60 V. R = 0.170 Ω @ V = –10 VDS( ..
FPN330 ,NPN Low Saturation TransistorFPN330 / FPN330AFPN330FPN330ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN330A ,NPN Low Saturation TransistorFPN330 / FPN330AFPN330FPN330ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN530 ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN530A ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560 ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560A ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FDN361AN
N-Channel, Logic Level, PowerTrench TM
FDN361AN April 1999 FDN361AN ΤΜ ΤΜ ΤΜ ΤΜ ΤΜ N-Channel, Logic Level, PowerTrench Features General Description This N-Channel Logic Level MOSFET is produced using • 1.8 A, 30 V. R = 0.100 Ω @ V = 10 V DS(on) GS Fairchild Semiconductor's PowerTrench process that has R = 0.150 Ω @ V = 4.5 V. DS(on) GS been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching Low gate charge ( 2.1nC typical ). performance. Fast switching speed. High performance trench technology for extremely Applications low R . DS(on) DC/DC converter High power version of industry standard SOT-23 Load switch package. Identical pin out to SOT-23 with Motor drives 30% higher power handling capability. D D S S G TM G SuperSOT -3 o T =25 C unless otherwise noted A Absolute Maximum Ratings Symbol Parameter FDN361AN Units VDSS Drain-Source Voltage 30 V V Gate-Source Voltage - Continuous 20 V GSS ± I Drain Current - Continuous (Note 1a) 1.8 A D - Pulsed 8 (Note 1a) PD Power Dissipation for Single Operation 0.5 W (Note 1b) 0.46 Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 C/W JA ° θ R Thermal Resistance, Junction-to-Case (Note 1) 75 C/W JC ° θ Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 361 FDN361AN 7’’ 8mm 3000 units 1998 FDN361AN, Rev. C
