FDN360P ,Single P-Channel, PowerTrench MOSFETFeatures This P-Channel Logic Level MOSFET is produced • –2 A, –30 V. R = 80 mΩ @ V = –10 V DS(ON) ..
FDN360P_NL ,Single P-Channel PowerTrench MOSFETapplications where low in-line power low R . DS(ON)loss and fast switching are required. • High pow ..
FDN361AN ,N-Channel, Logic Level, PowerTrench TMGeneral DescriptionThis N-Channel Logic Level MOSFET is produced using• 1.8 A, 30 V. R = 0.100 Ω @ ..
FDN371N ,20V N-Channel PowerTrench MOSFETapplications.• Low gate charge (7.6 nC typical)• Load switch• Fast switching speed• Battery protec ..
FDN371N ,20V N-Channel PowerTrench MOSFETFDN371NFDN371N® ®PowerTrenchThis 20V N-Channel MOSFET uses Fairchild’s high• 2.5 A, 20 V. R = 50 m ..
FDN372S ,30V N-Channel PowerTrench SyncFETFeatures The FDN372S is designed to replace a single MOSFET • 2.6 A, 30 V. R = 40 mΩ @ V = 10 V D ..
FPN330 ,NPN Low Saturation TransistorFPN330 / FPN330AFPN330FPN330ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN330A ,NPN Low Saturation TransistorFPN330 / FPN330AFPN330FPN330ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN530 ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN530A ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560 ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560A ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FDN360P
Single P-Channel, PowerTrench MOSFET
FDN360P May 2002 FDN360P Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced • –2 A, –30 V. R = 80 mΩ @ V = –10 V DS(ON) GS using Fairchild Semiconductor advanced Power Trench R = 125 mΩ @ V = –4.5 V DS(ON) GS process that has been especially tailored to minimize the on-state resistance and yet maintain low gate • Low gate charge (6.2 nC typical) charge for superior switching performance. These devices are well suited for low voltage and • High performance trench technology for extremely battery powered applications where low in-line power low R . DS(ON) loss and fast switching are required. • High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage V GSS ±20 I Drain Current – Continuous (Note 1a) –2 A D – Pulsed –10 P Power Dissipation for Single Operation (Note 1a) 0.5 D W (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range –55 to +150 J STG °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W R θJA °C/W R Thermal Resistance, Junction-to-Case (Note 1) 75 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 360 FDN360P 7’’ 8mm 3000 units FDN360P Rev F (W) 2002
