FDN359BN ,30V N-Channel Logic Level PowerTrench?MOSFETapplications where low in-line power SOT-23 package. Identical pin out to SOT-23 with 30% loss and ..
FDN360P ,Single P-Channel, PowerTrench MOSFETFeatures This P-Channel Logic Level MOSFET is produced • –2 A, –30 V. R = 80 mΩ @ V = –10 V DS(ON) ..
FDN360P_NL ,Single P-Channel PowerTrench MOSFETapplications where low in-line power low R . DS(ON)loss and fast switching are required. • High pow ..
FDN361AN ,N-Channel, Logic Level, PowerTrench TMGeneral DescriptionThis N-Channel Logic Level MOSFET is produced using• 1.8 A, 30 V. R = 0.100 Ω @ ..
FDN371N ,20V N-Channel PowerTrench MOSFETapplications.• Low gate charge (7.6 nC typical)• Load switch• Fast switching speed• Battery protec ..
FDN371N ,20V N-Channel PowerTrench MOSFETFDN371NFDN371N® ®PowerTrenchThis 20V N-Channel MOSFET uses Fairchild’s high• 2.5 A, 20 V. R = 50 m ..
FPN330 ,NPN Low Saturation TransistorFPN330 / FPN330AFPN330FPN330ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN330A ,NPN Low Saturation TransistorFPN330 / FPN330AFPN330FPN330ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN530 ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN530A ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560 ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560A ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FDN359BN
30V N-Channel Logic Level PowerTrench?MOSFET
FDN359BN January 2006 FDN359BN TM N-Channel Logic Level PowerTrench MOSFET Features General Description • 2.7 A, 30 V. R = 0.046 Ω @ V = 10 V DS(ON) GS This N-Channel Logic Level MOSFET is produced R = 0.060 Ω @ V = 4.5 V DS(ON) GS using Fairchild’s Semiconductor’s advanced PowerTrench process that has been especially tailored • Very fast switching speed. to minimize on-state resistance and yet maintain superior switching performance. • Low gate charge (5nC typical) These devices are well suited for low voltage and • High performance version of industry standard battery powered applications where low in-line power SOT-23 package. Identical pin out to SOT-23 with 30% loss and fast switching are required. higher power handling capability. D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I A D Maximum Drain Current – Continuous (Note 1a) 2.7 – Pulsed 15 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T , T Operating and Storage Temperature Range J STG −55 to +150 °C Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 250 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 359B FDN359BN 7’’ 8mm 3000 units FDN359BN Rev A(W) ©2006
