FDN358 ,P-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDN358P ,Single P-Channel, Logic Level, PowerTrench MOSFETFeatures This P-Channel Logic Level MOSFET is produced • –1.5 A, –30 V. R = 125 mΩ @ V = –10 V DS(O ..
FDN358P_NL ,Single P-Channel, Logic Level, PowerTrench MOSFETapplications: load switching and power management, low R . DS(ON)battery charging circuits, and DC/ ..
FDN359AN ,N-Channel Logic Level PowerTrench MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )AV Vo oI = C CΔ / Δ TJI V V 1 µ AT µ A ..
FDN359BN ,30V N-Channel Logic Level PowerTrench?MOSFETElectrical Characteristics T = 25°C unless otherwise noted ASymbol Parameter Test Conditions MinTyp ..
FDN359BN ,30V N-Channel Logic Level PowerTrench?MOSFETapplications where low in-line power SOT-23 package. Identical pin out to SOT-23 with 30% loss and ..
FPN330 ,NPN Low Saturation TransistorFPN330 / FPN330AFPN330FPN330ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN330A ,NPN Low Saturation TransistorFPN330 / FPN330AFPN330FPN330ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN530 ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN530A ,NPN Low Saturation TransistorFPN530 / FPN530AFPN530FPN530ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560 ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FPN560A ,NPN Low Saturation TransistorFPN560 / FPN560AFPN560FPN560ATO-226CBENPN Low Saturation TransistorThese devices are designed for h ..
FDN358
P-Channel Logic Level Enhancement Mode Field Effect Transistor
March 1998 FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode -1.5 A, -30 V, R = 0.125 W @ V = -10 V DS(ON) GS power field effect transistors are produced using Fairchild's R = 0.20 W @ V = - 4.5 V. DS(ON) GS proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize High power version of industry SOT-23 package: identical on-state resistance. These devices are particularly suited for pin out to SOT-23; 30% higher power handling capability. low voltage applications in notebook computers, portable High density cell design for extremely low R . DS(ON) phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed Exceptional on-resistance and maximum DC current in a very small outline surface mount package. capability. TM TM TM SO-8 SOT-223 SOIC-16 SuperSOT -8 SuperSOT -6 SuperSOT -3 D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDN358P Units V Drain-Source Voltage -30 V DSS Gate-Source Voltage ±20 V V GSS I Drain/Output Current - Continuous -1.5 A D - Pulsed -5 Maximum Power Dissipation (Note 1a) 0.5 W P D (Note 1b) 0.46 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W JC q FDN358P Rev.D © 1998 358
