FDN352AP ,Single P-Channel, PowerTrenchGeneral Description –1.3 A, –30V R = 180 mΩ @ V = –10V This P-Channel Logic Level MOSF ..
FDN357N ,N-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral Description
FDN358 ,P-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDN358P ,Single P-Channel, Logic Level, PowerTrench MOSFETFeatures This P-Channel Logic Level MOSFET is produced • –1.5 A, –30 V. R = 125 mΩ @ V = –10 V DS(O ..
FDN358P_NL ,Single P-Channel, Logic Level, PowerTrench MOSFETapplications: load switching and power management, low R . DS(ON)battery charging circuits, and DC/ ..
FDN359AN ,N-Channel Logic Level PowerTrench MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )AV Vo oI = C CΔ / Δ TJI V V 1 µ AT µ A ..
FPF2125 ,IntelliMAX Advanced Load Management ProductsGeneral Description 1.8 to 5.5V Input Voltage Range The FPF2123, FPF2124, and FPF2125 are a series ..
FPF2147 ,Full Function Load Switch with Reverse Current BlockingGeneral Description 1.8 to 5.5V Input Voltage Range The FPF2140/42/43/44/46/47 is a series of load ..
FPF2164 ,Full Function Load Switch with Adjustable Current LimitGeneral Description 1.8 to 5.5V Input Voltage Range The FPF2163, FPF2164, and FPF2165 is a series ..
FPF2165 ,Full Function Load Switch with Adjustable Current LimitGeneral Description 1.8 to 5.5V Input Voltage Range The FPF2163, FPF2164, and FPF2165 is a series ..
FPF2172 ,IntelliMAX?Advanced Load Management ProductsGeneral Description 1.8 to 5.5V Input Voltage Range The FPF2172 is a load switch which combines th ..
FPF2174 ,IntelliMAX?Advanced Load Management ProductsGeneral Description 1.8 to 5.5V Input Voltage Range The FPF2174 is a load switch which combines th ..
FDN352AP
Single P-Channel, PowerTrench
® FDN352AP Single P-Channel, PowerTrench MOSFET April 2005 FDN352AP ® Single P-Channel, PowerTrench MOSFET Features General Description ■ –1.3 A, –30V R = 180 mΩ @ V = –10V This P-Channel Logic Level MOSFET is produced using Fair- DS(ON) GS –1.1 A, –30V R = 300 mΩ @ V = –4.5V child Semiconductor advanced Power Trench process that has DS(ON) GS been especially tailored to minimize the on-state resistance and ■ High performance trench technology for extremely low yet maintain low gate charge for superior switching perfor- R . DS(ON) mance. ■ High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling These devices are well suited for low voltage and battery pow- capability. ered applications where low in-line power loss is needed in a very small outline surface mount package. Applications ■ Notebook computer power management D D S G S G G SuperSOT™-3 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –30 V DSS V Gate-Source Voltage ±25 V GSS I Drain Current – Continuous (Note 1a) –1.3 A D – Pulsed –10 P Power Dissipation for Single Operation (Note 1a) 0.5 W D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 75 θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 52AP FDN352AP 7’’ 8mm 3000 units ©2005 1 FDN352AP Rev. C
