FDN338P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET uses • –1.6 A, –20 V. R = 115 mΩ @ V = –4.5 V DS(ON) ..
FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect TransistorFDN338P September 2001 FDN338P Ò ÒP-Channel 2.5V Specified PowerTrench MOSFET
FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect Transistorapplications. • Fast switching speed
FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect TransistorApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDN338P_NL-- ,P-Channel Logic Level Enhancement Mode Field Effect TransistorFeatures This P-Channel 2.5V specified MOSFET uses • –1.6 A, –20 V. R = 115 mΩ @ V = –4.5 V DS(ON) ..
FDN339AN ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 3 A, 20 V. R = 0.035 Ω @ V = 4.5 VDS(ON) ..
FPD87370AXAVS ,Low EMI, Low Dynamic Power (SVGA) XGA/WXGA TFT-LCD Timing Controller with Reduced Swing Differential Signaling (RSDS™) OutputsFPD87370AXA Low EMI, Low Dynamic Power VGA/XGA/WXGA TFT-LCD Timing Controller with™Reduced Swing Di ..
FPF1004 ,IntelliMAX?Advanced Load Management ProductsFeatures The FPF1003A and FPF1004 are low R P-channel DS 1.2 V to 5.5 V Input Voltage Operating Ra ..
FPF1005 ,IntelliMAX?Advanced Load Management ProductsBlock Diagram VINTurn-On Slew RateControlled DriverCONTROL ONLOGICESD protectionVOUT FPF1005/6Ou ..
FPF1005 ,IntelliMAX?Advanced Load Management ProductsApplications added for output quick discharge when switch is turned off. PDAsBoth FPF1005 & FPF10 ..
FPF1006 ,IntelliMAX?Advanced Load Management ProductsBlock Diagram VINTurn-On Slew RateControlled DriverCONTROL ONLOGICESD protectionVOUT FPF1005/6Ou ..
FPF1016 ,IntelliMAX?1V Rated Advanced Load Management ProductsGeneral Description 0.8 to 1.8V Input Voltage Range The FPF1015/6/7/8 series is an IntelliMAX adva ..
FDN338P
P-Channel 2.5V Specified PowerTrench MOSFET
FDN338P September 2001 FDN338P Ò Ò P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses · –1.6 A, –20 V. R = 115 mW @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 155 mW @ V = –2.5 V DS(ON) GS It has been optimized for battery power management applications. · Fast switching speed Applications · High performance trench technology for extremely · Battery management low R DS(ON) · Load switch TM · Battery protection · SuperSOT -3 provides low R and 30% higher DS(ON) power handling capability than SOT23 in the same footprint D D S S G TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±8 ID Drain Current – Continuous –1.6 A – Pulsed –5 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 75 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .338 FDN338P 7’’ 8mm 3000 units Ó2001 FDN338P Rev F(W)
