FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect TransistorFDN338P September 2001 FDN338P Ò ÒP-Channel 2.5V Specified PowerTrench MOSFET
FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect Transistorapplications. • Fast switching speed
FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect TransistorApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FDN338P_NL-- ,P-Channel Logic Level Enhancement Mode Field Effect TransistorFeatures This P-Channel 2.5V specified MOSFET uses • –1.6 A, –20 V. R = 115 mΩ @ V = –4.5 V DS(ON) ..
FDN339AN ,N-Channel 2.5V Specified PowerTrench MOSFETFeaturesThis N-Channel 2.5V specified MOSFET is produced 3 A, 20 V. R = 0.035 Ω @ V = 4.5 VDS(ON) ..
FDN340 ,Single P-Channel/ Logic Level/ PowerTrench MOSFETapplications: Load switching and power management,• High performance trench technology for extremel ..
FPF1016 ,IntelliMAX?1V Rated Advanced Load Management ProductsGeneral Description 0.8 to 1.8V Input Voltage Range The FPF1015/6/7/8 series is an IntelliMAX adva ..
FPF2001 ,Full Function Load SwitchesGeneral Description 1.8 to 5.5V Input Voltage Range The FPF2000 through FPF2007 is a family of loa ..
FPF2003 ,Full Function Load SwitchesBlock DiagramVINUVLOONCONTROLLOGICCURRENTLIMITVOUTTHERMALFLAGBSHUTDOWNGND2004 Fairchild Semiconduct ..
FPF2004 ,Full Function Load SwitchesBlock DiagramVINUVLOONCONTROLLOGICCURRENTLIMITVOUTTHERMALFLAGBSHUTDOWNGND2004 Fairchild Semiconduct ..
FPF2005 ,Full Function Load SwitchesGeneral Description 1.8 to 5.5V Input Voltage Range The FPF2000 through FPF2007 is a family of loa ..
FPF2006 ,Full Function Load SwitchesApplications(FLAGB) low. The FPF2000, FPF2001, FPF2004 and FPF2005,have an auto-restart feature whi ..
FDN338P_NL-FDN338P_NL--
P-Channel Logic Level Enhancement Mode Field Effect Transistor
FDN338P September 2001 FDN338P Ò Ò P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses · –1.6 A, –20 V. R = 115 mW @ V = –4.5 V DS(ON) GS Fairchild’s advanced low voltage PowerTrench process. R = 155 mW @ V = –2.5 V DS(ON) GS It has been optimized for battery power management applications. · Fast switching speed Applications · High performance trench technology for extremely · Battery management low R DS(ON) · Load switch TM · Battery protection · SuperSOT -3 provides low R and 30% higher DS(ON) power handling capability than SOT23 in the same footprint D D S S G TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±8 ID Drain Current – Continuous –1.6 A – Pulsed –5 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W qJA Thermal Resistance, Junction-to-Case (Note 1) 75 R °C/W qJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .338 FDN338P 7’’ 8mm 3000 units Ó2001 FDN338P Rev F(W)
