FDN338 ,P-Channel Logic Level Enhancement Mode Field Effect Transistorapplications in notebook computers, portable phones, PCMCIA cards, and other battery powered cir ..
FDN338 ,P-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FDN338P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET uses • –1.6 A, –20 V. R = 115 mΩ @ V = –4.5 V DS(ON) ..
FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect TransistorFDN338P September 2001 FDN338P Ò ÒP-Channel 2.5V Specified PowerTrench MOSFET
FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect Transistorapplications. • Fast switching speed
FDN338P_NL ,P-Channel Logic Level Enhancement Mode Field Effect TransistorApplications • High performance trench technology for extremely • Battery management low R DS(ON) ..
FPD87352CXAVV ,+3.3V TFT-LCD Timing Controller with Single LVDS Input/Dual RSDS Outputs Including RTC (Response Time Compensation) for TFT-LCD Monitors ...Applications. It has a unique feature, RTC that will improven Flexible RSDS data output mapping for ..
FPD87370AXAVS ,Low EMI, Low Dynamic Power (SVGA) XGA/WXGA TFT-LCD Timing Controller with Reduced Swing Differential Signaling (RSDS™) OutputsFPD87370AXA Low EMI, Low Dynamic Power VGA/XGA/WXGA TFT-LCD Timing Controller with™Reduced Swing Di ..
FPF1004 ,IntelliMAX?Advanced Load Management ProductsFeatures The FPF1003A and FPF1004 are low R P-channel DS 1.2 V to 5.5 V Input Voltage Operating Ra ..
FPF1005 ,IntelliMAX?Advanced Load Management ProductsBlock Diagram VINTurn-On Slew RateControlled DriverCONTROL ONLOGICESD protectionVOUT FPF1005/6Ou ..
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FPF1006 ,IntelliMAX?Advanced Load Management ProductsBlock Diagram VINTurn-On Slew RateControlled DriverCONTROL ONLOGICESD protectionVOUT FPF1005/6Ou ..
FDN338
P-Channel Logic Level Enhancement Mode Field Effect Transistor
March 1998 FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode -1.6 A, -20 V, R = 0.13 W @ V = -4.5 V DS(ON) GS power field effect transistors are produced using Fairchild's R = 0.18 W @ V = -2.5 V. DS(ON) GS proprietary, high cell density, DMOS technology. This very Industry standard outline SOT-23 surface mount high density process is especially tailored to minimize TM package using proprietary SuperSOT -3 design for on-state resistance. These devices are particularly suited for superior thermal and electrical capabilities. low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits High density cell design for extremely low R . DS(ON) where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Exceptional on-resistance and maximum DC current capability. TM TM TM SuperSOT -3 SuperSOT -6 SuperSOT -8 SOIC-16 SO-8 SOT-223 D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T = 25 C unless other wise noted A Symbol Parameter FDN338P Units V Drain-Source Voltage -20 V DSS V Gate-Source Voltage - Continuous ±8 V GSS I Drain/Output Current - Continuous -1.6 A D - Pulsed -5 Maximum Power Dissipation (Note 1a) 0.5 W P D (Note 1b) 0.46 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W JA q R Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W JC q FDN338P Rev.D © 1998 338
