FDN335N ,N-Channel 2.5V Specified PowerTrench TM MOSFETFeatures• 1.7 A, 20 V. R = 0.07 Ω @ V = 4.5 VThis N-Channel 2.5V specified MOSFET is producedDS(ON ..
FDN335N_NL ,N-Channel 2.5V Specified PowerTrench MOSFETApplications• High power and current handling capability.• DC/DC converter• Load switchD DSGSTMGSup ..
FDN336P ,Single P-Channel 2.5V Specified PowerTrench TM MOSFETGeneral Description 336DN November ..
FDN336P_NL ,Single P-Channel Logic Level PowerTrench MOSFETElectrical Characteristics (T = 25 C unless otherwise noted )AV VoI C CΔ / ΔTJI V V µ Aµ ATI VI V)V ..
FDN337N ,N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesTMSuperSOT -3 N-Channel logic level enhancement mode 2.2 A, 30 V, R = 0.065 Ω @ V = 4.5 V ..
FDN337N_NL-- ,N-Channel Logic-Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25 C unless otherwise noted )ASymbol Parameter Conditions Min Typ M ..
FPD87346BXAVS ,Low EMI, Low Dynamic Power (SVGA) XGA/WXGA TFT-LCD Timing Controller with Reduced Swing Differential Signaling (RSDS™) OutputsFeatures™n Reduced Swing Differential Signalling (RSDS ) digitalTheFPD87346isatimingcontrollerthatc ..
FPD87346VS ,Low EMI, Low Dynamic Power (SVGA) XGA/WXGA TFT-LCD Timing Controller with Reduced Swing Differential Signaling (RSDS™) OutputsFPD87346 PRS Low EMI, Low Dynamic Power (SVGA) XGA/WXGA TFT-LCD Timing Controller™with Reduced Swin ..
FPD87346VS ,Low EMI, Low Dynamic Power (SVGA) XGA/WXGA TFT-LCD Timing Controller with Reduced Swing Differential Signaling (RSDS™) OutputsBlock Diagram of the LCD ModuleRSDS™ is a trademark of National Semiconductor Corporation 2003 Nati ..
FPD87352CXAVV ,+3.3V TFT-LCD Timing Controller with Single LVDS Input/Dual RSDS Outputs Including RTC (Response Time Compensation) for TFT-LCD Monitors ...Applications. It has a unique feature, RTC that will improven Flexible RSDS data output mapping for ..
FPD87370AXAVS ,Low EMI, Low Dynamic Power (SVGA) XGA/WXGA TFT-LCD Timing Controller with Reduced Swing Differential Signaling (RSDS™) OutputsFPD87370AXA Low EMI, Low Dynamic Power VGA/XGA/WXGA TFT-LCD Timing Controller with™Reduced Swing Di ..
FPF1004 ,IntelliMAX?Advanced Load Management ProductsFeatures The FPF1003A and FPF1004 are low R P-channel DS 1.2 V to 5.5 V Input Voltage Operating Ra ..
FDN335N
N-Channel 2.5V Specified PowerTrench TM MOSFET
FDN335N April 1999 FDN335N TM N-Channel 2.5V Specified PowerTrench MOSFET General Description Features • 1.7 A, 20 V. R = 0.07 Ω @ V = 4.5 V This N-Channel 2.5V specified MOSFET is produced DS(ON) GS using Fairchild Semiconductor's advanced PowerTrench R = 0.100 Ω @ V = 2.5 V. DS(ON) GS process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for • Low gate charge (3.5nC typical). superior switching performance. • High performance trench technology for extremely low R . DS(ON) Applications • High power and current handling capability. • DC/DC converter • Load switch D D S GS TM G SuperSOT -3 T = 25°C unless otherwise noted Absolute Maximum Ratings A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 8 V GSS ± (Note 1a) I Drain Current - Continuous 1.7 A D - Pulsed 8 P Power Dissipation for Single Operation (Note 1a) 0.5 W D (Note 1b) 0.46 C T , T Operating and Storage Junction Temperature Range -55 to +150 ° J stg Thermal Characteristics R (Note 1a) C/W JA Thermal Resistance, Junction-to-Ambient 250 ° θ R Thermal Resistance, Junction-to-Case (Note 1) 75 C/W JC ° θ Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity 335 FDN335N 7’’ 8mm 3000 units 1999 FDN335N Rev. C
