FDN308P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET uses a rugged • –20 V, –1.5 A. R = 125 mΩ @ V = –4.5 ..
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FDN335N ,N-Channel 2.5V Specified PowerTrench TM MOSFETFeatures• 1.7 A, 20 V. R = 0.07 Ω @ V = 4.5 VThis N-Channel 2.5V specified MOSFET is producedDS(ON ..
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FDN308P
P-Channel 2.5V Specified PowerTrench MOSFET
FDN308P February 2001 FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged • –20 V, –1.5 A. R = 125 mΩ @ V = –4.5 V DS(ON) GS gate version of Fairchild’s advanced PowerTrench R = 190 mΩ @ V = –2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of gate drive voltage • Fast switching speed (2.5V – 12V). • High performance trench technology for extremely Applications low R DS(ON) • Power management TM • SuperSOT -3 provides low R and 30% higher DS(ON) • Load switch power handling capability than SOT23 in the same • Battery protection footprint D D S S G TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage –20 V DSS V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) –1.5 A D – Pulsed –10 Maximum Power Dissipation (Note 1a) W 0.5 P D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range –55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W θJA Thermal Resistance, Junction-to-Case (Note 1) 75 R °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 308 FDN308P 7’’ 8mm 3000 units FDN308P Rev B(W) 2001