FDN302P ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Power managementTM• SuperSOT -3 provides low R and 30% higherDS(ON)• Load ..
FDN304P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –2.4 A, –20 V. R = 52 mΩ @ V = –4.5 VDS(ON) GSF ..
FDN304P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FDN304PZ ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –2.4 A, –20 V. R = 52 mΩ @ V = –4.5 V DS(ON) ..
FDN306P ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –2.6 A, –12 V. R = 40 mΩ @ V = –4.5 V DS(ON) ..
FDN308P ,P-Channel 2.5V Specified PowerTrench MOSFETFeatures This P-Channel 2.5V specified MOSFET uses a rugged • –20 V, –1.5 A. R = 125 mΩ @ V = –4.5 ..
FPAB30BH60B ,PFC SPM?3 Series Ver.2 for 1-Phase Boost PFCApplications such as Air Conditioners. It CombinesIC for Gate Driving and Protection Optimized Circ ..
FPAB30PH60 ,Smart Power Module for Front-End RectifierFeaturesFPAB30PH60 is an advanced smart power module of • Low thermal resistance due to Al O -DBC ..
FPAL20SL60 ,Smart Power Module (SPM)FeaturesFPAL20SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchi ..
FPBL10SH60 ,Smart Power Module (SPM)FeaturesFPBL10SH60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchi ..
FPBL30SL60 ,Smart Power Module (SPM)FeaturesFPBL30SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchi ..
FPD1500SOT89 , LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
FDN302P October 2000 FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged • –20 V, –2.4 A. R = 0.055 Ω @ V = –4.5 V DS(ON) GS gate version of Fairchild’s advanced PowerTrench R = 0.080 Ω @ V = –2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of gate drive voltage • Fast switching speed (2.5V – 12V). • High performance trench technology for extremely Applications low R DS(ON) • Power management TM • SuperSOT -3 provides low R and 30% higher DS(ON) • Load switch power handling capability than SOT23 in the same • Battery protection footprint D D S S G TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage V DSS –20 V Gate-Source Voltage V GSS ±12 I Drain Current – Continuous (Note 1a) A D –2.4 – Pulsed –10 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range J STG °C –55 to +150 Thermal Characteristics Thermal Resistance, Junction-to-Ambient (Note 1a) 250 R °C/W θJA R Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W θJC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 302 FDN302P 7’’ 8mm 3000 units 2000 FDN302P Rev C(W)
