FDMS9620S ,30V Dual N-Channel PowerTrench?MOSFETGeneral Description Max r = 21.5mΩ at V = 10V, I = 7.5ADS(on) GS DThis device includes two special ..
FDN302 ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Power managementTM• SuperSOT -3 provides low R and 30% higherDS(ON)• Load ..
FDN302P ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Power managementTM• SuperSOT -3 provides low R and 30% higherDS(ON)• Load ..
FDN304P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –2.4 A, –20 V. R = 52 mΩ @ V = –4.5 VDS(ON) GSF ..
FDN304P_NL ,P-Channel 1.8V Specified PowerTrench MOSFETApplications• High performance trench technology for extremely• Battery managementlow RDS(ON)• Load ..
FDN304PZ ,P-Channel 1.8V Specified PowerTrench MOSFETFeatures This P-Channel 1.8V specified MOSFET uses • –2.4 A, –20 V. R = 52 mΩ @ V = –4.5 V DS(ON) ..
FPAB30BH60B ,PFC SPM?3 Series Ver.2 for 1-Phase Boost PFCApplications such as Air Conditioners. It CombinesIC for Gate Driving and Protection Optimized Circ ..
FPAB30PH60 ,Smart Power Module for Front-End RectifierFeaturesFPAB30PH60 is an advanced smart power module of • Low thermal resistance due to Al O -DBC ..
FPAL20SL60 ,Smart Power Module (SPM)FeaturesFPAL20SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchi ..
FPBL10SH60 ,Smart Power Module (SPM)FeaturesFPBL10SH60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchi ..
FPBL30SL60 ,Smart Power Module (SPM)FeaturesFPBL30SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchi ..
FPD1500SOT89 , LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
FDMS9620S
30V Dual N-Channel PowerTrench?MOSFET
® FDMS9620S Dual N-Channel PowerTrench MOSFET July 2007 FDMS9620S tm ® Dual N-Channel PowerTrench MOSFET Q1: 30V, 16A, 21.5mΩ Q2: 30V, 18A, 13mΩ Features Q1: N-Channel General Description Max r = 21.5mΩ at V = 10V, I = 7.5A DS(on) GS D This device includes two specialized MOSFETs in a unique dual Max r = 29.5mΩ at V = 4.5V, I = 6.5A DS(on) GS D Power 56 package. It is designed to provide an optimal Q2: N-Channel Synchronous Buck power stage in terms of efficiency and PCB Max r = 13mΩ at V = 10V, I = 10A DS(on) GS D utilization. The low switching loss "High Side" MOSFET is Max r = 17mΩ at V = 4.5V, I = 8.5A complemented by a Low Conduction Loss "Low Side" SyncFET. DS(on) GS D Low Qg high side MOSFET Applications Low r low side MOSFET Synchronous Buck Converter for: DS(on) Thermally efficient dual Power 56 package Notebook System Power Pinout optimized for simple PCB design General Purpose Point of Load RoHS Compliant G1 G1 D1 D1 S2 5 D1 4 D1 D1 D1 D1 D1 D1 S2 D1 6 3 S1/ S1/D D2 2 G2 G2 S2 D1 7 2 S2 S2 S2 S2 G2 G1 8 1 S2 S2 Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage ±20 ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 16 18 C -Continuous (Silicon limited) T = 25°C 21 44 C I A D -Continuous T = 25°C (Note 1a) 7.5 10 A -Pulsed 60 60 Power Dissipation for Single Operation T = 25°C (Note 1a) 2.5 A P W D T = 25°C (Note 1b) 1 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 8.2 3.1 θJC R Thermal Resistance, Junction to Ambient (Note 1a) 50 °C/W θJA R Thermal Resistance, Junction to Ambient (Note 1b) 120 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS9620S FDMS9620S Power 56 13” 12mm 3000 units 1 ©2007 FDMS9620S Rev.D2
