FDMS8880 ,30V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design Synchronous Buck for Notebook Vcore and Server RoHS Com ..
FDMS9600S ,30V Dual N-Channel PowerTrench?MOSFETGeneral DescriptionQ1: N-ChannelThis device includes two specialized MOSFETs in a unique dual Power ..
FDMS9620S ,30V Dual N-Channel PowerTrench?MOSFETGeneral Description Max r = 21.5mΩ at V = 10V, I = 7.5ADS(on) GS DThis device includes two special ..
FDN302 ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Power managementTM• SuperSOT -3 provides low R and 30% higherDS(ON)• Load ..
FDN302P ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Power managementTM• SuperSOT -3 provides low R and 30% higherDS(ON)• Load ..
FDN304P ,P-Channel 1.8V Specified PowerTrench MOSFETFeaturesThis P-Channel 1.8V specified MOSFET uses• –2.4 A, –20 V. R = 52 mΩ @ V = –4.5 VDS(ON) GSF ..
FPAB30BH60B ,PFC SPM?3 Series Ver.2 for 1-Phase Boost PFCApplications such as Air Conditioners. It CombinesIC for Gate Driving and Protection Optimized Circ ..
FPAB30PH60 ,Smart Power Module for Front-End RectifierFeaturesFPAB30PH60 is an advanced smart power module of • Low thermal resistance due to Al O -DBC ..
FPAL20SL60 ,Smart Power Module (SPM)FeaturesFPAL20SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchi ..
FPBL10SH60 ,Smart Power Module (SPM)FeaturesFPBL10SH60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchi ..
FPBL30SL60 ,Smart Power Module (SPM)FeaturesFPBL30SL60 is an advanced smart power module (SPM) • UL Certified No. E209204that Fairchi ..
FPD1500SOT89 , LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT
FDMS8880
30V N-Channel PowerTrench?MOSFET
® FDMS8880 N-Channel PowerTrench MOSFET May 2009 FDMS8880 ® N-Channel PowerTrench MOSFET 30 V, 21 A, 8.5 m: Features General Description Max r = 8.5 m: at V = 10 V, I = 13.5 A The FDMS8880 has been designed to minimize losses in power DS(on) GS D conversion application. Advancements in both silicon and Max r = 13.0 m: at V = 4.5 V, I = 10.9 A DS(on) GS D package technologies have been combined to offer the lowest Advanced Package and Silicon combination r while maintaining excellent switching performance. DS(on) for low r and high efficiency DS(on) Applications MSL1 robust package design Synchronous Buck for Notebook Vcore and Server RoHS Compliant Notebook Battery Pack Load Switch Top Bottom Pin 1 S G D 5 4 S S G S D 6 3 D S 7 2 D D S D 8 1 D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 21 C -Continuous (Silicon limited) T = 25 °C 51 C I A D -Continuous T = 25 °C (Note 1a) 13.5 A -Pulsed 80 E Single Pulse Avalanche Energy (Note 3) 60 mJ AS Power Dissipation T = 25 °C 42 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.3 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8880 FDMS8880 Power 56 13 ’’ 12 mm 3000 units ©2009 1 FDMS8880 Rev.C1
