FDMS8692 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 9.0m at V = 10V, I = 12A The FDMS8692 has been designed to minimize lo ..
FDMS8880 ,30V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design Synchronous Buck for Notebook Vcore and Server RoHS Com ..
FDMS9600S ,30V Dual N-Channel PowerTrench?MOSFETGeneral DescriptionQ1: N-ChannelThis device includes two specialized MOSFETs in a unique dual Power ..
FDMS9620S ,30V Dual N-Channel PowerTrench?MOSFETGeneral Description Max r = 21.5mΩ at V = 10V, I = 7.5ADS(on) GS DThis device includes two special ..
FDN302 ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Power managementTM• SuperSOT -3 provides low R and 30% higherDS(ON)• Load ..
FDN302P ,P-Channel 2.5V Specified PowerTrench MOSFETApplicationslow RDS(ON)• Power managementTM• SuperSOT -3 provides low R and 30% higherDS(ON)• Load ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS8690
30V N-Channel PowerTrench?MOSFET
® FDMS8690 N-Channel Power Trench MOSFET February 2007 FDMS8690 tm ® N-Channel Power Trench MOSFET 30V, 27A, 9.0mΩ Features General Description Max r = 9.0mΩ at V = 10V, I = 14.0A This device has been designed specifically to improve the DS(on) GS D efficiency of DC/DC converters. Using new techniques in Max r = 12.5mΩ at V = 4.5V, I = 11.5A DS(on) GS D MOSFET construction, the various components of gate charge High performance trench technology for extremely low r and capacitance have been optimized to reduce switching DS(on) and gate charge losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time Minimal Qgd (2.9nC typical) gate drive circuits. Very low r has been maintained to DS(on) RoHS Compliant provide an extremely versatile device. Application High Efficiency DC-DC converters. Notebook CPU power supply Multi purpose Point of Load S S S G Pin 1 D 5 4 G S D 6 3 7 2 S D D 8 1 S D D D D Power 56 (Bottom view) MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 27 C -Continuous (Silicon limited) T = 25°C 52 C I A D -Continuous T = 25°C (Note 1a) 14 A -Pulsed 100 Power Dissipation T = 25°C 37.8 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 3.3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8690 FDMS8690 Power 56 13’’ 12mm 3000 units 1 ©2007 FDMS8690 Rev.C2
