FDMS8674 ,30V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design Computing VR & IMVP Vcore RoHS Compliant Secondary Side ..
FDMS8680 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 7.0m at V = 10V, I = 14A The FDMS8680 has been designed to minimize lo ..
FDMS8690 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 9.0mΩ at V = 10V, I = 14.0AThis device has been designed specifically ..
FDMS8692 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 9.0m at V = 10V, I = 12A The FDMS8692 has been designed to minimize lo ..
FDMS8880 ,30V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design Synchronous Buck for Notebook Vcore and Server RoHS Com ..
FDMS9600S ,30V Dual N-Channel PowerTrench?MOSFETGeneral DescriptionQ1: N-ChannelThis device includes two specialized MOSFETs in a unique dual Power ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS8674
30V N-Channel PowerTrench?MOSFET
® FDMS8674 N-Channel PowerTrench MOSFET May 2009 FDMS8674 tm ® N-Channel PowerTrench MOSFET 30V, 21A, 5.0m: Features General Description Max r = 5.0m: at V = 10V, I = 17A The FDMS8674 has been designed to minimize losses in power DS(on) GS D conversion application. Advancements in both silicon and Max r = 8.0m: at V = 4.5V, I = 14A DS(on) GS D package technologies have been combined to offer the lowest Advanced Package and Silicon combination r while maintaining excellent switching performance. DS(on) for low r and high efficiency DS(on) Applications MSL1 robust package design Computing VR & IMVP Vcore RoHS Compliant Secondary Side Synchronous Rectifier POL DC/DC Converter Oring FET/ Load Switch Top Bottom Pin 1 S G 5 4 D S S G 6 3 S D D 7 2 S D D 8 1 D S D D Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 21 C -Continuous (Silicon limited) T = 25°C 94 C I A D -Continuous T = 25°C (Note 1a) 17 A -Pulsed 150 E Single Pulse Avalanche Energy (Note 3) 181 mJ AS Power Dissipation T = 25°C 78 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.6 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8674 FDMS8674 Power 56 13’’ 12mm 3000units 1 ©2009 FDMS8674 Rev.C2
