FDMS8672S General DescriptionThe FDMS8672S has been designed to minimize losses in Max r = 5.0m: at V = 10V ..
FDMS8674 ,30V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design Computing VR & IMVP Vcore RoHS Compliant Secondary Side ..
FDMS8680 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 7.0m at V = 10V, I = 14A The FDMS8680 has been designed to minimize lo ..
FDMS8690 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 9.0mΩ at V = 10V, I = 14.0AThis device has been designed specifically ..
FDMS8692 ,30V N-Channel PowerTrench?MOSFETGeneral Description Max r = 9.0m at V = 10V, I = 12A The FDMS8692 has been designed to minimize lo ..
FDMS8880 ,30V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design Synchronous Buck for Notebook Vcore and Server RoHS Com ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS8672S
® TM FDMS8672S N-Channel PowerTrench SyncFET May 2009 FDMS8672S ® TM N-Channel PowerTrench SyncFET 30V, 35A, 5m: Features General Description The FDMS8672S has been designed to minimize losses in Max r = 5.0m: at V = 10V, I = 17A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 7.0m: at V = 4.5V, I = 15A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This Advanced Package and Silicon combination for low r DS(on) DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Application MSL1 robust package design RoHS Compliant Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Bottom Top Pin 1 S G D 5 4 S S G D 6 3 S D 7 2 S D D S D D 8 1 D Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 35 C -Continuous (Silicon limited) T = 25°C 90 C I A D -Continuous T = 25°C 17 A -Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 337 mJ AS Power Dissipation T = 25°C 50 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.5 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8672S FDMS8672S Power 56 13’’ 12mm 3000 units 1 ©2009 FDMS8672S Rev.C3
