FDMS8670 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 2.6m: at V = 10V, I = 24A This N-Channel MOSFET is produced using Fair ..
FDMS8670AS ,FDMS8670AS N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.0mOhmsGeneral Description Max r = 3.0m: at V = 10V, I = 23A The FDMS8670AS has been designed to minimize ..
FDMS8670S General DescriptionThe FDMS8670S has been designed to minimize losses in Max r = 3.5m: at V = 10V ..
FDMS8672AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters RoHS Complian ..
FDMS8672S General DescriptionThe FDMS8672S has been designed to minimize losses in Max r = 5.0m: at V = 10V ..
FDMS8674 ,30V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design Computing VR & IMVP Vcore RoHS Compliant Secondary Side ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS8670
30V N-Channel Power Trench?MOSFET
® FDMS8670 N-Channel Power Trench MOSFET May 2009 FDMS8670 tm ® N-Channel Power Trench MOSFET 30V, 42A, 2.6m: Features General Description Max r = 2.6m: at V = 10V, I = 24A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor's latest proprietary Power Trench process that Max r = 3.8m: at V = 4.5V, I = 18A DS(on) GS D has been especially tailored to minimize on-resistance. This part 100% UIL Tested exhibits industry leading switching FOM (RDS*Qgd) to enhance DC-DC synchronous rectifier efficiency. RoHS Compliant Application DC - DC Conversion Top Bottom Pin 1 S G 4 D 5 S S G D 6 S 3 D 7 2 S D D 8 1 D S D D Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 42 C -Continuous (Silicon limited) T = 25°C 135 C I A D -Continuous T = 25°C (Note 1a) 24 A -Pulsed 150 E Single Pulse Avalanche Energy (Note 3) 288 mJ AS Power Dissipation T = 25°C 78 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.6 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8670 FDMS8670 Power 56 13’’ 12 mm 3000 units 1 ©2009 FDMS8670 Rev.C1
