FDMS86540 ,60V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design Primary Switch in isolated DC-DC 100% UIL tested Synchr ..
FDMS8660AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters RoHS Complian ..
FDMS8660S ,N-Channel PowerTrench® SyncFETTM 30V, 40A, 2.4mOhmsGeneral DescriptionThe FDMS8660S has been designed to minimize losses in Max r = 2.4mΩ at V = 10V ..
FDMS8670 ,30V N-Channel Power Trench?MOSFETGeneral Description Max r = 2.6m: at V = 10V, I = 24A This N-Channel MOSFET is produced using Fair ..
FDMS8670AS ,FDMS8670AS N-Channel PowerTrench® SyncFETTM 30V, 42A, 3.0mOhmsGeneral Description Max r = 3.0m: at V = 10V, I = 23A The FDMS8670AS has been designed to minimize ..
FDMS8670S General DescriptionThe FDMS8670S has been designed to minimize losses in Max r = 3.5m: at V = 10V ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS86540
60V N-Channel PowerTrench?MOSFET
® FDMS86540 N-Channel PowerTrench MOSFET December 2011 FDMS86540 ® N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 mΩ Features General Description Max r = 3.4 mΩ at V = 10 V, I = 20 A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 4.1 mΩ at V = 8 V, I = 18.5 A DS(on) GS D ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low r conventional switching PWM controllers.It has been optimized DS(on) for low gate charge, low r , fast switching speed and body and high efficiency DS(on) diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design Primary Switch in isolated DC-DC 100% UIL tested Synchronous Rectifier RoHS Compliant Load Switch Bottom Top Pin 1 S D S S S D S G D S D D G D D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 50 C -Continuous (Silicon limited) T = 25 °C 126 C I A D -Continuous T = 25 °C (Note 1a) 20 A -Pulsed 120 E Single Pulse Avalanche Energy (Note 3) 228 mJ AS Power Dissipation T = 25 °C 96 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86540 FDMS86540 Power 56 13 ’’ 12 mm 3000 units ©2011 1 FDMS86540 Rev. C
