FDMS86322 ,80V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 7.65 m at V = 1 ..
FDMS86322 ,80V N-Channel PowerTrench?MOSFET®FDMS86322 N-Channel PowerTrench MOSFETOctober 2010FDMS86322®N-Channel PowerTrench MOSFET80 V, 60 ..
FDMS86520L ,60V N-Channel PowerTrench?MOSFETApplications 100% UIL tested RoHS Compliant Primary Switch in isolated DC-DC Synchronous Recti ..
FDMS86540 ,60V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design Primary Switch in isolated DC-DC 100% UIL tested Synchr ..
FDMS8660AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters RoHS Complian ..
FDMS8660S ,N-Channel PowerTrench® SyncFETTM 30V, 40A, 2.4mOhmsGeneral DescriptionThe FDMS8660S has been designed to minimize losses in Max r = 2.4mΩ at V = 10V ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS86322
80V N-Channel PowerTrench?MOSFET
® FDMS86322 N-Channel PowerTrench MOSFET October 2010 FDMS86322 ® N-Channel PowerTrench MOSFET� 80 V, 60 A, 7.65 m� Features General Description This N-Channel MOSFET is produced using Fairchild � Max r = 7.65 m� at V = 10 V, I = 13 A DS(on) GS D ® Semiconductor‘s advanced Power Trench process thant has � Max r = 12 m� at V = 6 V, I = 7.2 A DS(on) GS D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. � Advanced Package and Silicon combination for low r DS(on) and high efficiency � MSL1 robust package design Application � 100% UIL tested � DC-DC Conversion � RoHS Compliant Bottom Top Pin 1 S G D 5 4 S S G S D 6 3 S D 7 2 D D 8 1 S D D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 60 C -Continuous (Silicon limited) T = 25 °C 83 C I A D -Continuous T = 25 °C (Note 1a) 13 A -Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 135 mJ AS Power Dissipation T = 25 °C 104 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.2 �JC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 �JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86322 FDMS86322 Power 56 13 ’’ 12 mm 3000 units ©2010 1 FDMS86322 RevC
