FDMS86300 ,80V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design OringFET / Load Switching 100% UIL tested DC-DC Convers ..
FDMS86322 ,80V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 7.65 m at V = 1 ..
FDMS86322 ,80V N-Channel PowerTrench?MOSFET®FDMS86322 N-Channel PowerTrench MOSFETOctober 2010FDMS86322®N-Channel PowerTrench MOSFET80 V, 60 ..
FDMS86520L ,60V N-Channel PowerTrench?MOSFETApplications 100% UIL tested RoHS Compliant Primary Switch in isolated DC-DC Synchronous Recti ..
FDMS86540 ,60V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design Primary Switch in isolated DC-DC 100% UIL tested Synchr ..
FDMS8660AS Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters RoHS Complian ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS86300
80V N-Channel PowerTrench?MOSFET
® FDMS86300 N-Channel PowerTrench MOSFET October 2012 FDMS86300 ® N-Channel PowerTrench MOSFET 80 V, 80 A, 3.9 mΩ Features General Description Max r = 3.9 mΩ at V = 10 V, I = 19 A This N-Channel MOSFET has been designed specifically to DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 5.5 mΩ at V = 8 V, I = 15.5 A DS(on) GS D ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low r conventional switching PWM controllers.It has been optimized DS(on) for low gate charge, low r , fast switching speed and body and high efficiency DS(on) diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design OringFET / Load Switching 100% UIL tested DC-DC Conversion RoHS Compliant Bottom Top Pin 1 S G D 5 4 S S G D 6 3 S S D 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous T = 25 °C 80 C I -Continuous T = 25 °C (Note 1a) 19 A D A -Pulsed (Note 4) 250 E Single Pulse Avalanche Energy (Note 3) 252 mJ AS Power Dissipation T = 25 °C 104 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.2 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS86300 FDMS86300 Power 56 13 ’’ 12 mm 3000 units ©2012 1 FDMS86300 Rev.C1
