FDMS8460 ,40V N-Channel Power Trench?MOSFETGeneral Description Max r = 2.2m: at V = 10V, I = 25A This N-Channel MOSFET is produced using ..
FDMS86101 ,100V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 8 mΩ at V = 10 V ..
FDMS86101 ,100V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 8 mΩ at V = 10 V ..
FDMS86200 ,150V N-Channel Power Trench?MOSFETGeneral Description Max r = 18 mΩ at V = 10 V, I = 9.6 A This N-Channel MOSFET is produced us ..
FDMS86300 ,80V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design OringFET / Load Switching 100% UIL tested DC-DC Convers ..
FDMS86322 ,80V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 7.65 m at V = 1 ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS8460
40V N-Channel Power Trench?MOSFET
® FDMS8460 N-Channel Power Trench MOSFET December 2012 FDMS8460 ® N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description Max r = 2.2m: at V = 10V, I = 25A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor‘s advanced Power Trench process thant has Max r = 3.0m: at V = 4.5V, I = 21.7A DS(on) GS D been especially tailored to minimize the on-state resistance and Advanced Package and Silicon combination for low r yet maintain superior switching performance. DS(on) MSL1 robust package design Application 100% UIL tested DC - DC Conversion RoHS Compliant Top Bottom Pin 1 S S D S S G S D S D D D D D G D Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 40 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 49 C -Continuous (Silicon limited) T = 25°C 167 C I A D -Continuous T = 25°C (Note 1a) 25 A -Pulsed 160 E Single Pulse Avalanche Energy (Note 3) 864 mJ AS Power Dissipation T = 25°C 104 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.2 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS8460 FDMS8460 Power 56 13’’ 12 mm 3000 units 1 ©2012 FDMS8460 Rev.C3
