FDMS7698 Applications MSL1 robust package design IMVP Vcore Switching for Notebook 100% UIL tested VRM V ..
FDMS7700S ,30V Dual N-Channel PowerTrench?MOSFETElectrical Characteristics T = 25 °C unless otherwise notedJSymbol Parameter Test Conditions Type M ..
FDMS8027S Applications MSL1 robust package design Synchronous Rectifier for DC/DC Converters 100% UIL test ..
FDMS8460 ,40V N-Channel Power Trench?MOSFETGeneral Description Max r = 2.2m: at V = 10V, I = 25A This N-Channel MOSFET is produced using ..
FDMS86101 ,100V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 8 mΩ at V = 10 V ..
FDMS86101 ,100V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET is produced using Fairchild Max r = 8 mΩ at V = 10 V ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS7698
® FDMS7698 N-Channel PowerTrench MOSFET May 2011 FDMS7698 ® N-Channel PowerTrench MOSFET 30 V, 22 A, 10 mΩ Features General Description Max r = 10 mΩ at V = 10 V, I = 13.5 A This N-Channel MOSFET has been designed specifically to DS(on) GS D Max r = 15 mΩ at V = 4.5 V, I = 11.0 A improve the overall efficiency and to minimize switch node DS(on) GS D ringing of DC/DC converters using either synchronous or Advanced Package and Silicon combination for low r DS(on) conventional switching PWM controllers. It has been optimized and high efficiency for low gate charge, low r , fast switching speed and body DS(on) diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery Applications MSL1 robust package design IMVP Vcore Switching for Notebook 100% UIL tested VRM Vcore Switching for Desktop and server RoHS Compliant OringFET / Load Switching DC-DC Conversion Top Bottom Pin 1 S G D 5 4 S S G S D 6 3 D 7 S 2 D D 1 S D 8 D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 22 C -Continuous (Silicon limited) T = 25 °C 44 C I A D -Continuous T = 25 °C (Note 1a) 13.5 A -Pulsed 50 E Single Pulse Avalanche Energy (Note 3) 29 mJ AS Power Dissipation T = 25 °C 29 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 4.4 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7698 FDMS7698 Power 56 13 ’’ 12 mm 3000 units ©2011 1 FDMS7698 Rev.C1
