FDMS7672 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to Max r = 5.0 mΩ at V = ..
FDMS7680 ,30V N-Channel PowerTrench?MOSFETApplications IMVP Vcore Switching for Notebook MSL1 robust package design VRM Vcore Switchi ..
FDMS7692 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to Max r = 7.5 mΩ at V = ..
FDMS7692A ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to Max r = 8 mΩ at V = 1 ..
FDMS7694 ,30V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design IMVP Vcore Switching for Notebook 100% UIL tested VRM V ..
FDMS7694 ,30V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design IMVP Vcore Switching for Notebook 100% UIL tested VRM V ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS7672
30V N-Channel PowerTrench?MOSFET
® FDMS7672 N-Channel PowerTrench MOSFET April 2009 FDMS7672 ® N-Channel PowerTrench MOSFET 30 V, 5.0 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max r = 5.0 mΩ at V = 10 V, I = 19 A DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 6.9 mΩ at V = 4.5 V, I = 15 A DS(on) GS D ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized Advanced Package and Silicon design for low r and high DS(on) for low gate charge, low r , fast switching speed and body DS(on) efficiency diode reverse recovery performance. Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with Applications minimum EMI in sync buck converter applications IMVP Vcore Switching for Notebook MSL1 robust package design VRM Vcore Switching for Desktop and Server 100% UIL tested OringFET / Load Switch RoHS Compliant DC-DC Conversion Top Bottom Pin 1 S D 5 G 4 S S G S D 6 3 S D 7 2 D D 8 1 S D D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 28 C -Continuous (Silicon limited) T = 25 °C 80 C I A D -Continuous T = 25 °C (Note 1a) 19 A -Pulsed 90 E Single Pulse Avalanche Energy (Note 3) 72 mJ AS Power Dissipation T = 25 °C 48 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 2.6 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7672 FDMS7672 Power 56 13 ’’ 12 mm 3000 units ©2009 1 FDMS7672 Rev.D
