FDMS7670AS Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Converte ..
FDMS7672 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to Max r = 5.0 mΩ at V = ..
FDMS7680 ,30V N-Channel PowerTrench?MOSFETApplications IMVP Vcore Switching for Notebook MSL1 robust package design VRM Vcore Switchi ..
FDMS7692 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to Max r = 7.5 mΩ at V = ..
FDMS7692A ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to Max r = 8 mΩ at V = 1 ..
FDMS7694 ,30V N-Channel PowerTrench?MOSFETApplications MSL1 robust package design IMVP Vcore Switching for Notebook 100% UIL tested VRM V ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS7670AS
® TM FDMS7670AS N-Channel PowerTrench SyncFET March 2010 FDMS7670AS ® TM N-Channel PowerTrench SyncFET 30 V, 42 A, 3 m: Features General Description The FDMS7670AS has been designed to minimize losses in Max r = 3.0 m: at V = 10 V, I = 21 A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 3.2 m: at V = 7 V, I = 19 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This Advanced Package and Silicon combination for low r DS(on) DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Converters RoHS Compliant Notebook Vcore/ GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Bottom Top Pin 1 D G S 5 4 S S D G S 6 3 D S 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 42 C -Continuous (Silicon limited) T = 25 °C 113 C I A D -Continuous T = 25 °C (Note 1a) 22 A -Pulsed 150 dv/dt MOSFET dv/dt 1.8 V/ns E Single Pulse Avalanche Energy (Note 3) 98 mJ AS Power Dissipation T = 25 °C 65 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.9 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7670AS FDMS7670AS Power 56 13 ’’ 12 mm 3000 units 1 ©2010 FDMS7670AS Rev.C1
