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FDMS7660FAIN/a2950avai30V N-Channel PowerTrench?MOSFET


FDMS7660 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to „ Max r = 2.8 mΩ at V = ..
FDMS7660AS Applications„ MSL1 robust package design„ 100% UIL tested„ Synchronous Rectifier for DC/DC Converte ..
FDMS7670 ,30V N-Channel PowerTrench?MOSFETapplications„ IMVP Vcore Switching for Notebook„ MSL1 robust package design„ VRM Vcore Switching fo ..
FDMS7670 ,30V N-Channel PowerTrench?MOSFET®FDMS7670 N-Channel PowerTrench MOSFETJuly 2012FDMS7670 ..
FDMS7670 ,30V N-Channel PowerTrench?MOSFETApplicationsminimum EMI in sync buck converter
FDMS7670 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to „ Max r = 3.8 mΩ at V = ..
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FDMS7660
30V N-Channel PowerTrench?MOSFET
® FDMS7660 N-Channel PowerTrench MOSFET April 2009 FDMS7660 ® N-Channel PowerTrench MOSFET 30 V, 2.8 mΩ Features General Description This N-Channel MOSFET has been designed specifically to „ Max r = 2.8 mΩ at V = 10 V, I = 25 A DS(on) GS D improve the overall efficiency and to minimize switch node „ Max r = 3.5 mΩ at V = 4.5 V, I = 19 A DS(on) GS D ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized „ Advanced Package and Silicon combination for low r and DS(on) for low gate charge, low r , fast switching speed and body DS(on) high efficiency diode reverse recovery performance. „ Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with Applications minimum EMI in sync buck converter applications „ IMVP Vcore Switching for Notebook „ MSL1 robust package design „ VRM Vcore Switching for Desktop and Server „ 100% UIL tested „ OringFET / Load Switch „ RoHS Compliant „ DC-DC Conversion Top Bottom Pin 1 G S D 5 4 S S S D 6 3 G D S 7 2 D D 1 S D 8 D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 42 C -Continuous (Silicon limited) T = 25 °C 144 C I A D -Continuous T = 25 °C (Note 1a) 25 A -Pulsed 150 E Single Pulse Avalanche Energy (Note 3) 128 mJ AS Power Dissipation T = 25 °C 78 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.6 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7660 FDMS7660 Power 56 13 ’’ 12 mm 3000 units ©2009 1 FDMS7660 Rev. D
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