FDMS7650 ,30V N-Channel PowerTrench?MOSFETApplications 100% UIL tested OringFET RoHS Compliant Synchronous rectifierD DDD GD 5 4D 6 3 S ..
FDMS7650 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to Max r = 0.99 mΩ at V ..
FDMS7658AS Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Convert ..
FDMS7660 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to Max r = 2.8 mΩ at V = ..
FDMS7660AS Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Converte ..
FDMS7670 ,30V N-Channel PowerTrench?MOSFETapplications IMVP Vcore Switching for Notebook MSL1 robust package design VRM Vcore Switching fo ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS7650
30V N-Channel PowerTrench?MOSFET
® FDMS7650 N-Channel PowerTrench MOSFET January 2012 FDMS7650 ® N-Channel PowerTrench MOSFET 30 V, 100 A, 0.99 mΩ Features General Description This N-Channel MOSFET has been designed specifically to Max r = 0.99 mΩ at V = 10 V, I = 36 A DS(on) GS D improve the overall efficiency and to minimize switch node Max r = 1.55 mΩ at V = 4.5 V, I = 32 A DS(on) GS D ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized Advanced Package and Silicon combination for low r DS(on) for low gate charge and extremely low r . DS(on) and high efficiency MSL1 robust package design Applications 100% UIL tested OringFET RoHS Compliant Synchronous rectifier D D D D G D 5 4 D 6 3 S G S S D 7 2 S Pin 1 S S D 8 1 Top Bottom Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 30 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 100 C -Continuous (Silicon limited) T = 25 °C 232 C I A D -Continuous T = 25 °C (Note 1a) 36 A -Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 544 mJ AS Power Dissipation T = 25 °C 104 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.2 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7650 FDMS7650 Power 56 13 ’’ 12 mm 3000 units ©2012 1 FDMS7650 Rev.D3
