FDMS7650 ,30V N-Channel PowerTrench?MOSFETApplications 100% UIL tested OringFET RoHS Compliant Synchronous rectifierD DDD GD 5 4D 6 3 S ..
FDMS7650 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to Max r = 0.99 mΩ at V ..
FDMS7658AS Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Convert ..
FDMS7660 ,30V N-Channel PowerTrench?MOSFETGeneral DescriptionThis N-Channel MOSFET has been designed specifically to Max r = 2.8 mΩ at V = ..
FDMS7660AS Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for DC/DC Converte ..
FDMS7670 ,30V N-Channel PowerTrench?MOSFETapplications IMVP Vcore Switching for Notebook MSL1 robust package design VRM Vcore Switching fo ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS7608S
30V Dual N-Channel PowerTrench?MOSFET
® FDMS7608S Dual N-Channel PowerTrench MOSFET June 2011 FDMS7608S ® Dual N-Channel PowerTrench MOSFET Q1: 30 V, 22 A, 10.0 mΩ Q2: 30 V, 30 A, 6.3 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max r = 10.0 mΩ at V = 10 V, I = 12 A dual MLP package. The switch node has been internally DS(on) GS D connected to enable easy placement and routing of synchronous Max r = 13.6 mΩ at V = 4.5 V, I = 10 A DS(on) GS D buck converters. The control MOSFET (Q1) and synchronous Q2: N-Channel SyncFET (Q2) have been designed to provide optimal power Max r = 6.3 mΩ at V = 10 V, I = 15 A DS(on) GS D efficiency. Max r = 7.2 mΩ at V = 4.5 V, I = 13 A DS(on) GS D Applications RoHS Compliant Computing Communications General Purpose Point of Load Notebook VCORE S2 Q2 S2 D1 S2 S2 G2 S1/D2 S2 D1 D1 D1 D1 S2 D1 D1 G1 Q1 Pin1 Top Bottom G2 G1 Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Q1 Q2 Units V Drain to Source Voltage 30 30 V DS V Gate to Source Voltage (Note 3) ±20 ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 22 30 C -Continuous (Silicon limited) T = 25 °C 46 60 C I A D 1a 1b -Continuous T = 25 °C 12 15 A -Pulsed 50 60 E Single Pulse Avalanche Energy (Note 4) 29 33 mJ AS 1a 1b Power Dissipation for Single Operation T = 25°C 2.2 2.5 A P W D 1c 1d Power Dissipation for Single Operation T = 25°C 1.0 1.0 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics 1a 1b R Thermal Resistance, Junction to Ambient 57 50 θJA 1c 1d R Thermal Resistance, Junction to Ambient 125 120 °C/W θJA R Thermal Resistance, Junction to Case 4.0 3.2 θJC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7608S FDMS7608S Power 56 13 ” 12 mm 3000 units ©2011 1 FDMS7608S Rev.C
