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FDMS7556S
® TM FDMS7556S N-Channel Power Trench SyncFET March 2013 FDMS7556S ® TM N-Channel PowerTrench SyncFET 25 V, 130 A, 1.2 mΩ Features General Description The FDMS7556S has been designed to minimize losses in Max r = 1.2 mΩ at V = 10 V, I = 35 A DS(on) GS D power conversion application. Advancements in both silicon and Max r = 1.65 mΩ at V = 4.5 V, I = 31 A DS(on) GS D package technologies have been combined to offer the lowest r while maintaining excellent switching performance. This Advanced Package and Silicon combination for low r DS(on) DS(on) device has the added benefit of an efficient monolithic Schottky and high efficiency body diode. SyncFET Schottky Body Diode Applications MSL1 robust package design 100% UIL tested Synchronous Rectifier for Synchronous Buck Converters RoHS Compliant Notebook Server Telecom High Efficiency DC-DC Switch Mode Power Supplies Bottom Top Pin 1 D G S 5 4 S S D G S 6 3 D S 7 2 D S D 8 1 D D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 25 V DS V Gate to Source Voltage (Note 4) ±20 V GS Drain Current -Continuous (Package limited) T = 25 °C 130 C -Continuous (Silicon limited) T = 25 °C 222 C I A D -Continuous T = 25 °C (Note 1a) 35 A -Pulsed 200 E Single Pulse Avalanche Energy (Note 3) 312 mJ AS Power Dissipation T = 25 °C 96 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.3 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS7556S FDMS7556S Power 56 13 ’’ 12 mm 3000 units ©2013 1 FDMS7556S Rev.C3
