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FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
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FDMS6673BZ
-30V P-Channel PowerTrench?MOSFET
® FDMS6673BZ P-Channel PowerTrench MOSFET August 2009 FDMS6673BZ ® P-Channel PowerTrench MOSFET -30 V, -28 A, 6.8 m: Features General Description The FDMS6673BZ has been designed to minimize losses in load Max r = 6.8 m: at V = -10 V, I = -15.2 A DS(on) GS D switch applications. Advancements in both silicon and package Max r = 12.5 m: at V = -4.5 V, I = -11.2 A DS(on) GS D technologies have been combined to offer the lowest r and DS(on) ESD protection. Advanced Package and Silicon combination for low r DS(on) Applications HBM ESD protection level of 8 kV typical(note 3) Load Switch in Notebook and Server MSL1 robust package design Notebook Battery Pack Power Management RoHS Compliant Bottom Top Pin 1 5 4 D G S S S D 6 S G 3 D 7 2 S D D D 8 1 S D D Power 56 MOSFET Maximum Ratings T = 25 °C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage -30 V DS V Gate to Source Voltage ±25 V GS Drain Current -Continuous (Package limited) T = 25 °C -28 C -Continuous (Silicon limited) T = 25 °C -90 C I A D -Continuous T = 25 °C (Note 1a) -15.2 A -Pulsed -120 Power Dissipation T = 25 °C 73 C P W D Power Dissipation T = 25 °C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.7 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS6673BZ FDMS6673BZ Power 56 13 ’’ 12 mm 3000 units ©2009 1 FDMS6673BZ RevC3
