FDMS5672 ,60V N-Channel UltraFET Trench MOSFETapplications. Max r = 16.5mΩ at V = 6V, I = 8ADS(on) GS DOptimized for r , low ESR, low total and ..
FDMS5672 ,60V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 11.5mΩ at V = 10V, I = 10.6AUItraFET devices combine characteristics t ..
FDMS5672 ,60V N-Channel UltraFET Trench MOSFET®FDMS5672 N-Channel UltraFET Trench MOSFETDecember 2007FDMS5672 ..
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FDMS5672
60V N-Channel UltraFET Trench MOSFET
® FDMS5672 N-Channel UltraFET Trench MOSFET December 2007 FDMS5672 tm ® N-Channel UltraFET Trench MOSFET 60V, 22A, 11.5mΩ Features General Description Max r = 11.5mΩ at V = 10V, I = 10.6A UItraFET devices combine characteristics that enable DS(on) GS D benchmark efficiency in power conversion applications. Max r = 16.5mΩ at V = 6V, I = 8A DS(on) GS D Optimized for r , low ESR, low total and Miller gate charge, DS(on) Typ Qg = 32nC at V = 10V these devices are ideal for high frequency DC to DC converters. GS Low Miller Charge Application Optimized efficiency at high frequencies DC - DC Conversion RoHS Compliant S S S G Pin 1 D G 5 4 S D 6 3 7 2 S D D S 8 1 D D D D Power 56 (Bottom view) MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 22 C -Continuous (Silicon limited) T = 25°C 65 C I A D -Continuous T = 25°C (Note 1a) 10.6 A -Pulsed 60 E Single Pulse Avalanche Energy (Note 3) 337 mJ AS Power Dissipation T = 25°C 78 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.6 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS5672 FDMS5672 Power 56 13’’ 12mm 3000 units 1 ©2006 FDMS5672 Rev.C2
