FDMS5352 ,60V N-Channel Power Trench?MOSFETGeneral Description Max r = 6.7m: at V = 10V, I = 13.6A This N-Channel MOSFET is produced usin ..
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FDMS5352
60V N-Channel Power Trench?MOSFET
® FDMS5352 N-Channel Power Trench MOSFET May 2009 FDMS5352 tm ® N-Channel Power Trench MOSFET 60V, 49A, 6.7m: Features General Description Max r = 6.7m: at V = 10V, I = 13.6A This N-Channel MOSFET is produced using Fairchild DS(on) GS D ® Semiconductor‘s advanced Power Trench process that has Max r = 8.2m: at V = 4.5V, I = 12.3A DS(on) GS D been especially tailored to minimize the on-state resistance and Advanced Package and Silicon combination for low r yet maintain superior switching performance. DS(on) MSL1 robust package design 100% UIL Tested Application RoHS Compliant DC - DC Conversion Top Bottom Pin 1 S G 5 4 D S S G D 3 S 6 D 7 2 S D D 8 D 1 S D D Power 56 MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 49 C -Continuous (Silicon limited) T = 25°C 88 C I A D -Continuous T = 25°C (Note 1a) 13.6 A -Pulsed 100 E Single Pulse Avalanche Energy (Note 3) 600 mJ AS Power Dissipation T = 25°C 104 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.2 TJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 TJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS5352 FDMS5352 Power 56 13’’ 12mm 3000 units 1 ©2009 FDMS5352 Rev.C1
