FDMS3672 ,100V N-Channel UltraFET Trench MOSFETapplications. Max r = 29mΩ at V = 6V, I = 6.6ADS(on) GS DOptimized for r , low ESR, low total and ..
FDMS3672 ,100V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 23mΩ at V = 10V, I = 7.4AUItraFET devices combine characteristics that ..
FDMS3672 ,100V N-Channel UltraFET Trench MOSFETFDMS3672 N-Channel UltraFET Trench MOSFETFebruary 2007FDMS3672 ..
FDMS5352 ,60V N-Channel Power Trench?MOSFETGeneral Description Max r = 6.7m: at V = 10V, I = 13.6A This N-Channel MOSFET is produced usin ..
FDMS5672 ,60V N-Channel UltraFET Trench MOSFETapplications. Max r = 16.5mΩ at V = 6V, I = 8ADS(on) GS DOptimized for r , low ESR, low total and ..
FDMS5672 ,60V N-Channel UltraFET Trench MOSFETGeneral Description Max r = 11.5mΩ at V = 10V, I = 10.6AUItraFET devices combine characteristics t ..
FP75R12KE3 , Elektrische Eigenschaften / Electrical properties
FP75R12KT3 , EconoPIM3 module with fast trench/fieldstop IGBT3 and EmCon High Efficiency diode
FP75R12KT4 , EconoPIM3 module with trench/fieldstop IGBT4 and EmCon4 diode
FP75R12KT4_B15 , EconoPIM™3 module with trench/fieldstop IGBT4 and Emitter Controlled 4 diode
FP7G150US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FP7G50US60 ,Transfer Molded Type IGBT ModuleFeatures• Short Circuit rated 10us @Tc=100°C, Vge=15V• High Speed Switching• Low Saturation Voltage ..
FDMS3672
100V N-Channel UltraFET Trench MOSFET
FDMS3672 N-Channel UltraFET Trench MOSFET February 2007 FDMS3672 tm N-Channel UltraFET Trench MOSFET 100V, 22A, 23mΩ Features General Description Max r = 23mΩ at V = 10V, I = 7.4A UItraFET devices combine characteristics that enable DS(on) GS D benchmark efficiency in power conversion applications. Max r = 29mΩ at V = 6V, I = 6.6A DS(on) GS D Optimized for r , low ESR, low total and Miller gate charge, DS(on) Typ Qg = 31nC at V = 10V these devices are ideal for high frequency DC to DC converters. GS Low Miller Charge Application Optimized efficiency at high frequencies DC - DC Conversion RoHS Compliant S S S G Pin 1 D G 5 4 S D 6 3 7 2 S D D S 8 1 D D D D Power (Bottom view) MOSFET Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 100 V DS V Gate to Source Voltage ±20 V GS Drain Current -Continuous (Package limited) T = 25°C 22 C -Continuous (Silicon limited) T = 25°C 41 C I A D -Continuous T = 25°C (Note 1a) 7.4 A -Pulsed 30 Power Dissipation T = 25°C 78 C P W D Power Dissipation T = 25°C (Note 1a) 2.5 A T , T Operating and Storage Junction Temperature Range -55 to +150 °C J STG Thermal Characteristics R Thermal Resistance, Junction to Case 1.6 θJC °C/W R Thermal Resistance, Junction to Ambient (Note 1a) 50 θJA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDMS3672 FDMS3672 Power 56 13’’ 12mm 3000 units 1 ©2007 FDMS3672 Rev.C
